Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Edwin J. Koerperick"'
Autor:
Peyman Barakhshan, Garret A. Ejzak, Miguel Hernandez, Edwin J. Koerperick, John P. Prineas, Fouad Kiamilev, Kassem Nabha
Publikováno v:
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).
Infrared scene projectors using LEDs instead of resistor arrays are a new technology that is gaining popularity within the infrared projection community. This paper describes an approach to increase the density and efficiency of LED arrays using OnSe
Autor:
Gary W. Small, Adam Nylen, Muralidhar R. Mallem, Marc d′Anjou, Jonathon T. Olesberg, Ishaan Shandil, Elizabeth R. Gibson, Mark A. Arnold, Kaylee J. Lanz, Edwin J. Koerperick, Gregory Allan Brower, Christine Esther Evans, Daniel W. Cooley, Sehoon Kim
Publikováno v:
Biochemical Engineering Journal. 94:115-124
Monoclonal antibody production in glycoengineered Pichia pastoris was optimized for high cell density fed-batch fermentations. Results show that antibody productivity was 1.72-fold higher when maintaining oxygen-limited conditions compared to methano
Autor:
Elizabeth R. Gibson, David Pollard, Jonathon T. Olesberg, Gary W. Small, Jens Christensen, Christine Esther Evans, Kaylee J. Lanz, Edwin J. Koerperick, Marina Goldfeld, Mark A. Arnold
Publikováno v:
Biotechnology Progress. 30:749-759
Near-infrared spectroscopy is considered to be one of the most promising spectroscopic techniques for upstream bioprocess monitoring and control. Traditionally the nature of near-infrared spectroscopy has demanded multivariate calibration models to r
512$\,\times\,$512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices
Autor:
John P. Prineas, Amal Ikhlassi, Gerry Sullivan, Rodney McGee, Keith W. Goossen, John Lawler, Jonathon T. Olesberg, Jonathan Dickason, Dennis Norton, L. M. Murray, Nicholas Waite, Thomas F. Boggess, Fouad Kiamilev, Edwin J. Koerperick
Publikováno v:
IEEE Journal of Quantum Electronics. 49:753-759
Single element 33×33 μm2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A peak radiance of 2.2 W/cm2/sr was measured corresponding to an apparent temperature grea
Autor:
J. T. Olesberg, Joel M. Fastenau, Edwin J. Koerperick, Dmitri Lubyshev, Dennis Norton, Amy W. K. Liu, Yueming Qiu
Publikováno v:
Infrared Physics & Technology. 59:158-162
Antimony-based materials continue to provide great interest for infrared photodetector and focal plane array imaging applications. Detector architectures include InAs/Ga(In)Sb strained-layer superlattices, which create a type-II band alignment that c
Autor:
Edwin J. Koerperick, Thomas F. Boggess, Dennis Norton, John P. Prineas, B. V. Olson, Jonathon T. Olesberg
Publikováno v:
IEEE Journal of Quantum Electronics. 47:50-54
Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm2 mesa are demonstrated. Output power in excess of 600 μ.W was demonstrated from a 520 × 520 μm
Publikováno v:
Journal of Crystal Growth. 312:185-191
Growth optimization of unintentionally doped GaSb buffer layers on (1 0 0) GaSb substrates by molecular beam epitaxy is reported. Several growth parameters were varied to determine the optimal oxide desorption and GaSb growth conditions, as well as t
Publikováno v:
IEEE Journal of Quantum Electronics. 45:849-853
Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system grown by solid source molecular beam epitaxy are demonstrated in a cascaded active region conf
Autor:
Edwin J. Koerperick, M. Taysing-Lara, T. F. Boggess, J.T. Olesberg, John P. Prineas, L. M. Murray, K.A. Olver, Naresh C. Das, Fouad Kiamilev
Publikováno v:
IEEE Transactions on Electronics Packaging Manufacturing. 32:9-13
The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps,
Publikováno v:
IEEE Journal of Quantum Electronics. 44:1242-1247
Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of increasing optical emission. Devices were fabricated into 120 x 120 mum2 mesas to demonstrate