Zobrazeno 1 - 10
of 686
pro vyhledávání: '"Edward Yi-Chang"'
Autor:
Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 268-274 (2024)
In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of $6.0 ~\mu \text{m}$ as int
Externí odkaz:
https://doaj.org/article/82a72b4f519240c1b0f2654aa4860ff0
Autor:
Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Cheng-Hsien Yu, Yi-Fan Tsao, Pin Su, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 744-751 (2023)
In this research, $\Gamma $ -gated AlGaN/GaN HEMTs with different layout designs and heights of gate stems were fabricated to investigate their impacts on the noise performance in the Ka-band. First, devices with 4 types of gate peripheries were prep
Externí odkaz:
https://doaj.org/article/243c09fae0f740d8b4ca35d1e15fefa8
Autor:
Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 311-318 (2023)
This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (LG) of 100 nm was achieved through a 2-Step Photolithography Process and the
Externí odkaz:
https://doaj.org/article/b7f1cea37d184f1899a1447628478196
Autor:
Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Yi-Fan Tsao, Chang-Fu Dee, Pin Su, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 36-42 (2023)
In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the power performance of Ka-band devices, and a film thinning process is adopted in the fabrication process to reduce the parasitic capacitance caused by the thic
Externí odkaz:
https://doaj.org/article/0ad9e3ccda2244a5b4f83ff431402a2f
Publikováno v:
Electronics Letters, Vol 59, Iss 13, Pp n/a-n/a (2023)
Abstract The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test topology is utiliz
Externí odkaz:
https://doaj.org/article/5b4b5daf2e464b9897f42c1334a653f9
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 071001 (2024)
In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance ( R _c ) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μ
Externí odkaz:
https://doaj.org/article/6e7194366c79490fb40abefb7ca7e291
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 076501 (2024)
This study compares Vth-instability in D-mode MIS-HEMT devices between two epitaxial layers, AlN/AlGaN/GaN superlattice-W1, and three-step graded AlGaN-W2. Experimental results demonstrate that W1 exhibits ∼13% less Vth-instability compared to W2,
Externí odkaz:
https://doaj.org/article/98b4fb65dab44014a69d262f366b60ee
Publikováno v:
Micromachines, Vol 15, Iss 1, p 81 (2023)
In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported. The fabricated AlGaN/GaN HEMTs with OEP
Externí odkaz:
https://doaj.org/article/40e4213e566641119fd13c2cee703e68
Autor:
Ching-Yao Liu, Hsien-Chung Tang, Yueh-Tsung Shieh, Chih-Chiang Wu, Wei-Hua Chieng, Edward-Yi Chang, Daisuke Ueda
Publikováno v:
Energies, Vol 16, Iss 23, p 7856 (2023)
A new power receiving unit (PRU) is proposed in this paper for resonant wireless power transfer (WPT), which is characterized by the capability of attracting high power from the power transmitting unit (PTU). The resonant WPT is designed for deliveri
Externí odkaz:
https://doaj.org/article/c873e013b3174e90b41f2f37e37b1674
Autor:
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Jing-Yuan Wu, Si-Meng Chen, Nhan-Ai Tran, Heng-Tung Hsu, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 188-191 (2022)
In this article, sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated. These devices exhibit a significant improvement in the subthreshold performances w
Externí odkaz:
https://doaj.org/article/199de25c50134018b5a6cabd58a3a820