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pro vyhledávání: '"Edward S. Hermann"'
Autor:
Edward S. Hermann, John Carulli, Carmelo F. Scrudato, Steven B. Herschbein, Kyle M. Winter, Brian Yates
Publikováno v:
International Symposium for Testing and Failure Analysis.
Focused Ion Beam (FIB) chip circuit editing is a well-established highly specialized laboratory technique for making direct changes to the functionality of integrated circuits. A precisely tuned and placed ion beam in conjunction with process gases s
Publikováno v:
International Symposium for Testing and Failure Analysis.
The Focused Ion Beam (FIB) technique of internal modification for chip repair, layout verification, and internal signal probe access has become an integral part of the process for bringing advanced products to market. The pervasive switch from wire b
Publikováno v:
International Symposium for Testing and Failure Analysis.
For most advanced semiconductor products, Focused Ion Beam (FIB) circuit modification and node access through the backside of the chip is the only viable approach. The high density of interconnect wiring and the presence of C4 solder bumping for chip
Publikováno v:
International Symposium for Testing and Failure Analysis.
Focused Ion Beam (FIB) success has become more difficult as microchip process technology advances, requiring new techniques for damage control both during the microsurgery procedure and before the finished product can be electrically tested. Ultra th