Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Edward Preisler"'
Publikováno v:
IEEE Transactions on Nuclear Science. 69:518-526
Publikováno v:
IEEE Electron Device Letters. 42:1260-1263
A novel design for a silicon-integrated avalanche photodiode (APD) capable of high internal gain (>16,000) is presented. The APD was fabricated in an unmodified, commercial high-volume, high-performance (300 GHz ${f}_{T}/{f}_{\text {MAX}}$ ) silicon-
Autor:
Yuan Liu, Fabrizio Gambini, G. G. Meena, Michael Mcgivney, Renan Moreira, Edward Preisler, Jonathan Klamkin
Publikováno v:
Conference on Lasers and Electro-Optics.
We present an architecture for space-division-multiplexing with multi-core-fiber (MCF) for high-density and high-efficiency short-reach optical interconnects. A silicon photonics transceiver with tera-bits-per-second capability and high-efficiency du
Autor:
Yuan Liu, Fabrizio Gambini, Sergio Pinna, G. G. Meena, Renan Moreira, Edward Preisler, Jonathan Klamkin
Publikováno v:
Conference on Lasers and Electro-Optics.
We present a compact ring resonator based silicon photonics transceiver with 16-channel wavelength-division-multiplexing. 56 Gbps data transmission was achieved for a single ring modulator in depletion mode operation, which can support tera-bits-per-
Autor:
Edward Preisler, Farnood Rezaie, Yasir Qamar, Minoli Pathirane, Sina Soltanmohammad, Ron Tang, Oleg Martynov
Publikováno v:
Optical Fiber Communication Conference (OFC) 2022.
Aspects of silicon photonics process technologies intended for high volume production in a traditional silicon electronics-driven foundry environment are discussed. Both technological and economical challenges associated with this juxtaposition of a
Autor:
Edward Preisler
Publikováno v:
BCICTS
For the past two decades SiGe BiCMOS process technologies have filled in several gaps in commercial semiconductor product requirements not satisfied by standard CMOS processes. While this roster of applications has evolved and shifted during this tim
Publikováno v:
OFC
We demonstrate poly-crystalline silicon waveguide devices on deep-trench isolation in a commercial bulk 180nm SiGe BiCMOS process without any process modifications or post-processing. At 1550 nm, the measured loss for the poly-crystalline silicon wav
Publikováno v:
2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
Improvements in foundry RF and mm-wave Si offerings over the last several years have allowed it to take market share from III-V processes for TX / RX applications. The increased RF switch content in handsets is now dominated by RF-SOI which also supp
Publikováno v:
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.
A new circuit model based on time-domain characterization of Impact Ionization Avalanche Transit-Time (IMPATT) devices is proposed. The model introduces a new 3rd order low-pass filter to accurately model the delay response of carrier drift inside th
Publikováno v:
ECS Transactions. 1:363-370
We have studied tungsten gated hafnium oxide silicon MOSFETs and show that dissolved oxygen in the tungsten metal can diffuse to the hafnium oxide silicon interface, resulting in interfacial oxide growth and higher mobilities. These results indicate