Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Edward Letts"'
Autor:
Daryl Key, Edward Letts, Chuan-Wei Tsou, Mi-Hee Ji, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Shyh-Chiang Shen, Russell Dupuis, Tadao Hashimoto
Publikováno v:
Materials, Vol 12, Iss 12, p 1925 (2019)
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium A
Externí odkaz:
https://doaj.org/article/1576668a9ca04c5d8082f83c74188a0c
Publikováno v:
ECS Meeting Abstracts. :1358-1358
[Invited Paper] This paper reviews the growth of power-grade GaN crystals by the near-equilibrium ammonothermal (NEAT) method and reports the evaluation of a 4" bulk GaN crystal. Ammonothermal growth is a proven method of producing low-dislocation, G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebf19ef681558a0e6dee45a67edb14c7
https://doi.org/10.1149/ma2022-02371358mtgabs
https://doi.org/10.1149/ma2022-02371358mtgabs
Publikováno v:
Journal of Crystal Growth. 501:13-17
SixPoint Materials has successfully switched to production of two-inch diameter GaN wafers using the ammonothermal method. Crystal quality values are high with dislocation densities typically in the low 105 cm−2. In efforts to produce true epi-read
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a94c698ee7dae51d22ebab14cd72003
https://doi.org/10.1016/j.jcrysgro.2018.08.025
https://doi.org/10.1016/j.jcrysgro.2018.08.025
Publikováno v:
Journal of Crystal Growth. 456:27-32
The growth of high quality GaN by the ammonothermal method is appealing due to the potential to scale and achieve very high crystal quality. Several applications could benefit from the supply of very high quality GaN such as high power light emitting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03b4f37f8f4fb4850142ff0df9dfd1e5
https://doi.org/10.1016/j.jcrysgro.2016.08.023
https://doi.org/10.1016/j.jcrysgro.2016.08.023
Autor:
Theeradetch Detchprohm, Russell D. Dupuis, Edward Letts, Mi-Hee Ji, Chuan-Wei Tsou, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Tadao Hashimoto, Daryl Key
Publikováno v:
Materials, Vol 12, Iss 12, p 1925 (2019)
Materials
Volume 12
Issue 12
Materials
Volume 12
Issue 12
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2&rdquo
GaN substrates through our proprietary Near Equil
GaN substrates through our proprietary Near Equil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32c267c7e3033402819b093264157dcb
https://www.mdpi.com/1996-1944/12/12/1925
https://www.mdpi.com/1996-1944/12/12/1925
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVI.
This paper reviews recent development of two-inch gallium nitride (GaN) substrates fabricated by the near equilibrium ammonothermal (NEAT) method. The NEAT method utilizes a low driving force to achieve consistent crystal growth over a long period of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::135112d599a15e57ac77b66288900a70
https://doi.org/10.1117/12.2506059
https://doi.org/10.1117/12.2506059
Autor:
Daryl Key, Michael Dudley, Yafei Liu, Benjamin Jordan, Eric Shang, Balaji Raghothamachar, Edward Letts, Tadao Hashimoto
Publikováno v:
ECS Meeting Abstracts. :1805-1805
This paper provides evaluation of 2" GaN substrates produced by the near equilibrium ammonothermal (NEAT) method. Ammonothermal growth is a proven method of producing low-dislocation GaN crystals with practical productivity. [1, 2] By choosing a near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e0eb0bbfa4501c1d911f27d4a518c5d
https://doi.org/10.1149/ma2020-02261805mtgabs
https://doi.org/10.1149/ma2020-02261805mtgabs
Autor:
Sami Suihkonen, Turkka O. Tuomi, Harri Lipsanen, Tadao Hashimoto, Sakari Sintonen, Sierra Hoff, Edward Letts, Henri Jussila
Publikováno v:
Journal of Crystal Growth. 406:72-77
White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f324d7a6fefb37690fbd459ca250e38
https://doi.org/10.1016/j.jcrysgro.2014.08.022
https://doi.org/10.1016/j.jcrysgro.2014.08.022
Publikováno v:
Journal of Crystal Growth. 403:3-6
This paper reviews the current progress of ammonothermal growth at SixPoint Materials and discusses some of the remaining challenges to commercialize the technology. The mass production of the ammonothermal grown wafers of GaN for high power devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d187f3bb9e51f68fcb8bf7fcbdf670d
https://doi.org/10.1016/j.jcrysgro.2014.06.004
https://doi.org/10.1016/j.jcrysgro.2014.06.004
Autor:
Shyh-Chiang Shen, Chuan-wei Tsou, Mi-Hee Ji, Marzieh Noodeh, Edward Letts, Daryl Key, Tadao Hashimoto, Theeradetch Detchphrom, Russell D Dupuis
Publikováno v:
ECS Meeting Abstracts. :1350-1350
The successful development of III-V nitride materials systems has led to active research of advanced electronic devices in the recent decades. III-nitride (III-N)-based devices have a bandgap engineering flexibility, large energy gap, direct band str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9476913ad5f308dea92cdc69031d3aa3
https://doi.org/10.1149/ma2019-02/31/1350
https://doi.org/10.1149/ma2019-02/31/1350