Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Edward L. Griffin"'
Publikováno v:
International Journal of RF and Microwave Computer‐Aided Engineering. 8:441-454
This paper describes the multilayer microstrip structure using low dielectric constant polyimide as a buffer layer between the microstrip conductor and the GaAs substrate to reduce dissipation loss, especially for very high impedance microstrip lines
Autor:
Inder J. Bahl, Edward L. Griffin
Publikováno v:
Microwave and Optical Technology Letters. 5:328-330
A new structure for a tunable bandpass filter is described in this letter. The bandwidth or bandpass response of the filter can be varied electronically by using high Q varactors or Schottky diodes. © 1992 John Wiley & Sons, Inc.
Publikováno v:
SPIE Proceedings.
This paper presents a novel noise parameter extraction technique for MESFETs. All measurements are done with a 50 ohm source and load which allow the FET to be characterized on wafer easily, accurately and quickly. The noise parameter values are extr
Publikováno v:
Journal of Economic Entomology. 19:525-529
A cold-mixed lubricating oil emulsion can be made by the addition of 8 liquid ounces of crude cresylic acid, cresol U. S. P., or cyclohexanol to the usual proportions of potassium fish oil soap and oil called for in the boiled emulsion formula, adjus
Autor:
Edward L. Griffin
Publikováno v:
Journal of the American Chemical Society. 45:1648-1657
Publikováno v:
Microwave and Optical Technology Letters. 2:155-157
We report state-of-the-art measured performance of class-B dual-gate GaAs power FETs fabricated using a highly manufacturable SAG technology. The class-B devices use selective co-implantation for FET channel formation and demonstrate 640 mW / mm (for
Autor:
Edward L. Griffin
Publikováno v:
The Journal of the American Pharmaceutical Association (1912). 15:196-198
Publikováno v:
19th European Microwave Conference, 1989.
We discuss the design, fabrication and measured RF performance of fully planar, refractory, self-aligned gate (SAG) power FETs. The FET active channels are formed by direct ion-implantation into substrate. The performance and uniformity of these FETs
Publikováno v:
18th European Microwave Conference, 1988.
A novel approach to provide redundancy in an N-Way MESFET Switch has been invented and realized with monolithic microwave integrated circuit technology. This switch circuit uses series and shunt FETs configured in a manner to prevent failure of the s
Publikováno v:
Journal of the Franklin Institute. 202:664
The Babcock method for the determination of butter-fat in milk and cream is modified to give the per cent by volume of oil in concentrated and spray-strength petroleum oil emulsions. The modified method is adaptable to emulsions containing soap, cres