Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Edward Hackbarth"'
Publikováno v:
IEEE Transactions on Electron Devices. 34:1736-1740
A methodology for bipolar process diagnosis is developed to evaluate advanced shallow profile bipolar technologies. In this method, the emitter-base leakage current (I EBO ) is used as an indicative parameter for the degree of the intrinsic and extri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f167ae1eab513a87eb5bc861fecbde
https://doi.org/10.1109/t-ed.1987.23145
https://doi.org/10.1109/t-ed.1987.23145
Autor:
Mark B. Ketchen, T.-C. Chen, J.M.C. Stork, Denny D. Tang, Ching-Te Chuang, Edward Hackbarth, Guann-Pyng Li, Tak H. Ning
Publikováno v:
IEEE Electron Device Letters. 8:174-175
The control of the lateral diffusion of the extrinsic base is a key issue in the downscaling of high-speed bipolar transistors for achieving the lowest base resistance without altering the shallow impurity profile of the intrinsic region. This letter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c62f5b587e295812b737df3c8dc7e3c
https://doi.org/10.1109/edl.1987.26592
https://doi.org/10.1109/edl.1987.26592