Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Edward Chang Yi"'
Autor:
Chen Chen Chung, Kung Liang Lin, Hong Quan Nguyen, Man Chi Huang, Tieng Tung Luong, Tran Binh Tinh, Quang Ho Luc, Hai Dang Trinh, Hung Wei Yu, Chi Lang Nguyen, Edward Chang Yi
Publikováno v:
ECS Transactions. 50:461-467
We present the effect of mult iple A lN buffer layers on characterizations of GaN film quality, which includes a thin high-low-h igh-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053cdac9c27303957293767555542fb8
https://doi.org/10.1149/05003.0461ecst
https://doi.org/10.1149/05003.0461ecst
Autor:
Chien-I Kuo, Li-Han Hsu, Szu-Ping Tsai, Chien-Ying Wu, Guo-Wei Huang, Heng-Tung Hsu, Faiz Aizad, Edward Chang Yi
Publikováno v:
2010 International Conference on Enabling Science and Nanotechnology (ESciNano).
Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, In x Ga 1−x As) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III–V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edd9f538c92bb56b2ef69827eb5bfd4d
https://doi.org/10.1109/escinano.2010.5700948
https://doi.org/10.1109/escinano.2010.5700948
Autor:
Binh-Tinh Tran, Edward Chang Yi, Kung Liang Lin, Tieng Tung Luong, Hung Wei Yu, Man Chi Huang, Chen Chen Chung, Hai Dang Trinh, Hong Quan Nguyen, Chi Lang Nguyen, Quang Ho Luc
Publikováno v:
ECS Meeting Abstracts. :2572-2572
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a717d3b6ac9f3c7cc2bb7fa2b5f1e2
https://doi.org/10.1149/ma2012-02/30/2572
https://doi.org/10.1149/ma2012-02/30/2572
Publikováno v:
Multimedia Systems; Apr2003, Vol. 8 Issue 6, p512-522, 11p
Autor:
Chang Jung-Ting, 張榮庭
100
GaAs epitaxy, as nucleation layer, is grown on Ge substrate using ALE technique (Atomic Layer Epitaxy). According our study, triangle defects are formed on the surface of (In)GaAs/Ge due to lower decomposition rate of TMGa at low growth temp
GaAs epitaxy, as nucleation layer, is grown on Ge substrate using ALE technique (Atomic Layer Epitaxy). According our study, triangle defects are formed on the surface of (In)GaAs/Ge due to lower decomposition rate of TMGa at low growth temp
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/19240612958150924137
