Zobrazeno 1 - 10 of 83 pro vyhledávání: '"Edward C. Lightowlers"'
1
Spectroscopic study and structural characterization of a Li-related photoluminescence center in neutron-irradiated Si
Autor: Gavin Davies, Edward C. Lightowlers, Fernando Rodríguez
Publikováno v: Physical Review B. 62:6180-6191
We report on a new Li-related photoluminescence center with zero-phonon line at 879.3 meV. The center is created at 550‐600 °C in the final stages of annealing out radiation-induced point defects in float-zone silicon. Isotope and chemical correla
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f0496c103c640f1b8fe1ba864f623bb1
https://doi.org/10.1103/physrevb.62.6180
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3
Cadmium–lithium defects in silicon
Autor: A. Safanov, C.A. Frehill, Martin O. Henry, Edward C. Lightowlers, Enda McGlynn
Publikováno v: Materials Science and Engineering: B. 58:159-162
Three photoluminescence (PL) bands, observed for silicon samples doped with Cd and quenched from high temperatures, have relative intensities which depend strongly on the annealing history of the samples. The intensity of two of the bands is enhanced
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::28177243cc418e0e4ad2de6df6749957
https://doi.org/10.1016/s0921-5107(98)00291-8
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4
Photoluminescence characterisation of hydrogen-related centres in silicon
Autor: Edward C. Lightowlers, A.N. Safonov
Publikováno v: Materials Science and Engineering: B. 58:39-47
The results of photoluminescence studies on hydrogen-related centres created in thermal treated silicon are reported. An account is given of the optical, electronic and structural characteristics of the defects obtained from uniaxial stress, magnetic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cc358dcbec2cdade23490a26779c1d4
https://doi.org/10.1016/s0921-5107(98)00272-4
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5
Hydrogen molecules in boron-doped crystalline silicon
Autor: R.E. Pritchard, R.C. Newman, J. H. Tucker, Edward C. Lightowlers
Publikováno v: Semiconductor Science and Technology. 14:77-80
Boron-doped, float zone silicon has been hydrogenated at C and then quenched to room temperature. Infrared absorption measurements of the samples in their as-quenched state and following anneals at C reveal the vibrational mode from H-B pairs, togeth
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94c953ec6ed2eb9e1ae5818a9815a0b3
https://doi.org/10.1088/0268-1242/14/1/011
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6
Sulfur-related metastable luminescence center in silicon
Autor: M. Singh, P. W. Mason, Gavin Davies, B. Ittermann, L. Jeyanathan, S.S. Ostapenko, George D. Watkins, Edward C. Lightowlers, H. J. Sun
Publikováno v: Physical Review B. 58:7007-7019
Optical detection of magnetic resonance (ODMR) and photoluminescence (PL) studies are described for the sulfur-related metastable defect in silicon first reported by Brown and Hall. It is established that its two configurations, $A$ and $B,$ are of t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5269719ccfe0442facf54b319521e19f
https://doi.org/10.1103/physrevb.58.7007
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7
Fourier-transform photoluminescence spectroscopy of excitons bound to group-III acceptors in silicon: Uniaxial stress
Autor: Mike L. W. Thewalt, Edward C. Lightowlers, S. An, V. A. Karasyuk
Publikováno v: Physical Review B. 56:15672-15684
Photoluminescence of excitons bound to Al, Ga, In, and Tl acceptors in Si crystals subjected to 〈001〉, 〈111〉, or 〈110〉 uniaxial stress was studied at liquid-He temperatures with 0.0025-meV spectral resolution. The deformation-potential co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2eae0309d1f533eae13267ad9df20ed
https://doi.org/10.1103/physrevb.56.15672
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