Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Edward Barth"'
Autor:
Jonathan Edward Barth
Publikováno v:
The New England Quarterly. 87:490-525
The Massachusetts mint of 1652-82 was a remarkably bold expression of colonial sovereignty. As a restored monarchy sought to wrest control of the Boston coinage after 1660, pragmatic moderates within the colony simultaneously sought to overpower the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cf0edb0ac464e00deb538fa8afbd9d1
https://doi.org/10.1162/tneq_a_00396
https://doi.org/10.1162/tneq_a_00396
Autor:
Shan Hu, Richard Hill, Vidya Kaushik, Alexey Vert, Uzma Rana, Richard Gaylord, Saikumar Vivekanand, PapaRao Satyavolu, Edward Barth, Joshua Herman, Tommaso Orzali, Tom Dyer
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
III–V on Silicon epitaxial wafers are typically contaminated with residual III–V materials on the backside, bevel and front side exclusion zone. This contamination poses a risk for device manufacturing. The level of contamination can vary from tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f910fa2993fc133147e23d13d7f9cca
https://doi.org/10.1109/asmc.2015.7164420
https://doi.org/10.1109/asmc.2015.7164420
Autor:
Shawn G. Gibbs, Melissa Hoffman, Craig S. Davidson, Edward Barth, Pasquale V. Scarpino, Andrew WagnerA. Wagner, Christopher F. Green
Publikováno v:
Journal of Environmental Engineering and Science. 5:75-79
Aerosolized disinfectant use has appealing qualities for inactivation and remediation of biologically contaminated materials. Their ability to reach exterior and interior spaces of walls and difficult to access areas has potential as a simple and cos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b7503a06bde6af03014d2eb9baba97e
https://doi.org/10.1139/s05-037
https://doi.org/10.1139/s05-037
Autor:
Jason Gill, Vincent J. McGahay, Yanfeng Wang, Alexander J. Swinton, Richard A. Wachnik, Edward Barth, R. Rosenberg, X.-H. Liu, H. S. Rathore, Paul S. McLaughlin, J.F. McGrath, Brett H. Engel, Michael Lane, G. Goth, Terry A. Spooner, William F. Landers, Conal E. Murray, Ping-Chuan Wang, Timothy M. Shaw, C. Barile, James R. Lloyd, T. H. Ivers, John M. Aitken, G. A. Biery, James J. Demarest, R. Goldblatt, Charles R. Davis, R. G. Filippi, L. Nicholson
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
The reliability of a stacked via chain stressed under various thermal cycle conditions is described. The chain consists of Cu Dual Damascene metallization with SiLK (trademark of Dow Chemical) as the organic low-k dielectric. Failure analysis indicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::942a3df374b515e5dcd81e19921190cb
https://doi.org/10.1109/relphy.2004.1315302
https://doi.org/10.1109/relphy.2004.1315302
Autor:
William F. Landers, D.K. Manger, Henry A. Nye, Sampath Purushothaman, Ronald D. Goldblatt, Naftali E. Lustig, Andrew H. Simon, Sandra G. Malhotra, Erdem Kaltalioglu, S Das, M. Stetter, Soon-Cheon Seo, Chenming Hu, J.B. Connolly, Timothy J. Dalton, John A. Fitzsimmons, Charles R. Davis, Birendra N. Agarwala, John E. Heidenreich, Andy Cowley, Daniel C. Edelstein, M.B. Anand, Spooner Terry A, Alina Deutsch, Vincent J. McGahay, H. Rathore, P.A. Emmi, Richard A. Wachnik, Mahadevaiyer Krishnan, P. Jones, Timothy M. Shaw, Stephan A. Cohen, J.G. Ryan, G. A. Biery, Z.G. Chen, Edward Barth, C.G. Faltermeier, J. L. Hedrick, Junjun Liu, C. DeWan, J.P. Hummel, B.E. Kastenmeier, Eric G. Liniger, R. Mih
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
The integration of dual damascene copper with low-k dielectric at the 0.13 /spl mu/m technology node is described. Up to five levels of copper wiring at three different metal pitches is provided in a spin-on organic inter metal dielectric (SiLK/sup T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f502d66db4977250b7a53f4d4d4abd29
https://doi.org/10.1109/iitc.2000.854342
https://doi.org/10.1109/iitc.2000.854342
Autor:
Ian D. Melville, Henry A. Nye, Edward Barth, Paul S. McLaughlin, John A. Fitzsimmons, X. Chen, Vincent J. McGahay, T. H. Ivers, G. A. Biery, D.K. Manger, T.C. Chen, A. McDonald, E.N. Levine, Spooner Terry A, Ronald D. Goldblatt, S.E. Greco, C. DeWan
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
The integration of dual damascene copper with fluorosilicate glass (FSC) at the 0.18 /spl mu/m technology node is described. The BEOL structure has been implemented for an advanced CMOS technology, and along with an SOI FEOL is being used for high pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a0970f1f15214c5bdd917df14396507
https://doi.org/10.1109/iitc.2000.854330
https://doi.org/10.1109/iitc.2000.854330
Autor:
Sanjit K. Das, Jia Lee, Glenn A. Biery, Ronald D. Goldblatt, John A. Fitzsimmons, Wei-Tsu Tseng, Edward Barth
Publikováno v:
MRS Proceedings. 732
Hydrogenated silicon nitride, hydrogenated silicon carbide, and their intermediates were chemo-mechanically polished. Results showed that, within the material set examined, harder materials also have higher CMP removal rates. In addition, CMP rates f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc4aa96b62ffd38cce1e5a216382b474
https://doi.org/10.1557/proc-732-i1.7
https://doi.org/10.1557/proc-732-i1.7