Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Edward A. Hutchins"'
Autor:
Lara Fieschi-Corso, Helder Antunes, Edward Lloyd Hutchins, Henry Xin, George R. Brandes, Joe A. Dion, Jeffrey S. Flynn, Rae Van Egas
Publikováno v:
physica status solidi (c). :2327-2330
2 Experimental Thick delta doped Al0.25Ga0.75N layers and Al0.25Ga0.75N/GaN HEMT layers were produced in an Aixtron 200/4 MOCVD system using NH3, TMG, TMA and Si2H6 precursors. The mate- rial was grown on 2-inch, c-plane sapphire at 1220 °C and 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d94ac2517b36c06a22631761ee060b9
https://doi.org/10.1002/pssc.200303313
https://doi.org/10.1002/pssc.200303313
Publikováno v:
MRS Proceedings. 892
Metalorganic chemical vapor deposition was employed to deposit high quality, highly uniform III-Nitride transistor structures on 100 mm diameter semi-insulating 4H-SiC substrates. Electron mobility was over 2000 cm2/Vs at room temperature. Sheet resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6378ea8851fdb4abd47160f345af081
https://doi.org/10.1557/proc-0892-ff15-01
https://doi.org/10.1557/proc-0892-ff15-01
Autor:
George R. Brandes, Xian-An Cao, J. L. Garrett, Helder Antunes, L. Fieschi-Corso, Larry B. Rowland, H. P. Xin, Steven Francis Leboeuf, Joe A. Dion, Jeffrey S. Flynn, R. Van Egas, Edward Lloyd Hutchins
Publikováno v:
MRS Proceedings. 798
In this paper, we report the electrical and optical characteristics of Si delta-doped AlGaN cladding layers, p-cladding structure optimization and the impact on the efficiency of 340nm AlGaN UV LEDs. Compared to the uniformly doped n-AlGaN layer, add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c75e2370761bdd7508a449620d29ae
https://doi.org/10.1557/proc-798-y3.10
https://doi.org/10.1557/proc-798-y3.10
Autor:
Jeffrey S. Flynn, Helder Antunes, Leah G. Wallace, George R. Brandes, Edward Lloyd Hutchins, Joe A. Dion
Publikováno v:
MRS Proceedings. 743
Delta doping (paused growth doping) was investigated as an alternative to uniformly distributing the dopant in the nitride semiconductor layer. In this work, delta doped layers were produced in MOVPE-grown AlGaN and GaN layers at a susceptor temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d89cae3970bda4b27ec8109da343bc2
https://doi.org/10.1557/proc-743-l11.44
https://doi.org/10.1557/proc-743-l11.44
Autor:
George R. Brandes, Robert P. Vaudo, Allan Salant, Xueping Xu, Edward Lloyd Hutchins, Joseph Malcarne
Publikováno v:
MRS Proceedings. 743
Background impurities and the resulting electrical characteristics were studied for GaN wafers grown using hydride vapor phase epitaxy at various growth conditions. The electron concentration was found to decrease with increasing GaN thickness, by or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c98b5beacaf117dd40e4b2aebca4169a
https://doi.org/10.1557/proc-743-l3.37
https://doi.org/10.1557/proc-743-l3.37
B cell repertoires in HLA-sensitized kidney transplant candidates undergoing desensitization therapy
Autor:
H. Christina Fan, John F. Beausang, Stephen R. Quake, Maria U. Hutchins, Edward A. Hutchins, Rachael Curtis, Julie M. Yabu, Rene Sit, Kshama Jirage
Publikováno v:
Journal of Translational Medicine
Background Kidney transplantation is the most effective treatment for end-stage renal disease. Sensitization refers to pre-existing antibodies against human leukocyte antigen (HLA) protein and remains a major barrier to successful transplantation. De
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a144ec0218eff0a13e19f32ebfd1cfe9