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pro vyhledávání: '"Eduardo Alejandro Valdez-Torija"'
Autor:
Eduardo Alejandro Valdez-Torija, Antonio Coyopol, Godofredo García-Salgado, Román Romano-Trujillo, Crisóforo Morales-Ruiz, Enrique Rosendo-Andrés, Marco Antonio Vásquez-Agustín, Justo Miguel Gracia-Jiménez, Reina Galeazzi-Isasmendi, Francisco Morales-Morales
Publikováno v:
Crystals, Vol 13, Iss 4, p 613 (2023)
In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs films were grown at 800, 900
Externí odkaz:
https://doaj.org/article/b0330d971600454f8c679738e26fa202