Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Eduard V. Maistruk"'
Publikováno v:
East European Journal of Physics, Iss 1, Pp 386-392 (2024)
The paper investigates the collection coefficient of minority charge carriers in silicon p-i-n photodiodes and the influence of certain technological factors on it. It has been found that the diffusion length of minority charge carriers and the resis
Externí odkaz:
https://doaj.org/article/5aec1f53ca6e4bf0901d2f362c8836af
Autor:
Eduard V. Maistruk, Ivan G. Orletskyi, Maria I. Ilashchuk, Ivan P. Koziarskyi, Dmytro P. Koziarskyi
Publikováno v:
ACS Omega, Vol 8, Iss 37, Pp 34146-34151 (2023)
Externí odkaz:
https://doaj.org/article/4070c716818b4d9a9ced53e5f748cf34
Autor:
Eduard V. Maistruk, Ivan G. Orletskyi, Mariya I. Ilashchuk, Ivan P. Koziarskyi, Dmytro P. Koziarskyi
Publikováno v:
Optik. 276:170663
Publikováno v:
Fifteenth International Conference on Correlation Optics.
Publikováno v:
Fifteenth International Conference on Correlation Optics.
Publikováno v:
Fifteenth International Conference on Correlation Optics.
Publikováno v:
2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP).
The conditions for the fabrication of anisotype heterostructures p-Cu 2 O/CdS/n-Si by the method of RF magnetron sputtering of CdS and Cu 2 O thin films onto n-Si crystalline substrates have been studied. The mechanisms of current transfer are analyz
Publikováno v:
2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP).
The conditions for the production of isotype FTO/n-CdTe heterojunctions by spray pyrolysis of SnO 2 :F (FTO) thin films on n-CdTe crystalline substrates have been studied. The mechanisms of electron motion through the energy barrier of the heterojunc
Publikováno v:
2021 IEEE 3rd Ukraine Conference on Electrical and Computer Engineering (UKRCON).
The photoelectrical properties of the p-Cu 2 O/n-CdTe heterostructure obtained on the basis of Cu2o thin films were investigated. In work also describes the Cu2o thin films growth conditions and its influence on the optical and electrical properties.
Autor:
Eduard V. Maistruk
Publikováno v:
Russian Physics Journal. 61:1435-1442
Electrical and magnetic properties of the semimagnetic semiconductor Hg1–x–yMnxFeyTe1–zSz solid solutions were studied in the ranges of temperatures 77–320 K and magnetic fields 0.25–6 kOe. In the crystals under study, the effect of giant m