Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Edris Khorani"'
Autor:
Edris Khorani, Shona McNab, Tudor E. Scheul, Tasmiat Rahman, Ruy S. Bonilla, Stuart A. Boden, Peter R. Wilshaw
Publikováno v:
APL Materials, Vol 8, Iss 11, Pp 111106-111106-11 (2020)
Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key
Externí odkaz:
https://doaj.org/article/27d727e18ddf4ab4bef5912f00cb8177
Autor:
Shona McNab, Xinya Niu, Edris Khorani, Ailish Wratten, Audrey Morisset, Nicholas E. Grant, John D. Murphy, Pietro P. Altermatt, Matthew Wright, Peter R. Wilshaw, Ruy S. Bonilla
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87b91c611e210c0ddaaf771153f8c26f
https://ora.ox.ac.uk/objects/uuid:be849e6c-9ccc-4de2-83d3-5ef4b99b0ea0
https://ora.ox.ac.uk/objects/uuid:be849e6c-9ccc-4de2-83d3-5ef4b99b0ea0
Autor:
Ailish Wratten, Sophie L. Pain, David Walker, Arne Benjamin Renz, Edris Khorani, Tim Niewelt, Nicholas E. Grant, John D. Murphy
We have studied the mechanisms underpinning effective surface passivation of silicon with hafnium oxide (HfO 2 ) thin films grown via atomic layer deposition (ALD). Plasma-enhanced ALD with O 2 plasma and a tetrakis(dimethylamido)hafnium precursor wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10474ee8b7ba8fe0f1726cc6555f3c85
Publikováno v:
Progress in Photovoltaics: Research and Applications. 28:1248-1257
Wavelength and angle resolved scattering (WARS) reflectance measurements are attractive to the photovoltaic (PV) industry as a means of characterizing the light-trapping properties of a textured front surface. Moreover, at the PV module level, where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1ca724e16ed0816450a177071193b3b
https://doi.org/10.1002/pip.3319
https://doi.org/10.1002/pip.3319
Autor:
Shona McNab, Mingzhe Yu, Isabel Al-Dhahir, Edris Khorani, Tasmiat Rahman, Stuart A. Boden, Pietro P. Altermatt, Peter R. Wilshaw, Ruy S. Bonilla
Publikováno v:
SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics.
Highly passivating, hole selective contacts are required for future high efficiency silicon solar cells. This work investigates selected dielectrics as potential SiOx replacements to act as hole selective contacts. AlOx and SiNx were identified as go
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f887a3be0c8fb30a4c23f7e8c8fd9778
https://doi.org/10.1063/5.0089282
https://doi.org/10.1063/5.0089282
Autor:
Sophie L. Pain, Edris Khorani, Tim Niewelt, Ailish Wratten, Galo J. Paez Fajardo, Ben P. Winfield, Ruy S. Bonilla, Marc Walker, Louis F. J. Piper, Nicholas E. Grant, John D. Murphy
Publikováno v:
Advanced Materials Interfaces. 9:2201339
Surface passivating thin films are crucial for limiting the electrical losses during charge carrier collection in silicon photovoltaic devices. Certain dielectric coatings of more than 10 nm provide excellent surface passivation, and ultra-thin (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1555760354b73d6b16a61b4cb138472
https://doi.org/10.1002/admi.202201339
https://doi.org/10.1002/admi.202201339
Autor:
Ruy S. Bonilla, Stuart A. Boden, Shona McNab, Edris Khorani, Peter R. Wilshaw, Tudor E. Scheul, Tasmiat Rahman
Publikováno v:
APL Materials, Vol 8, Iss 11, Pp 111106-111106-11 (2020)
Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::939c1b48d6d9f0a47743b54d9a4a530e
https://ora.ox.ac.uk/objects/uuid:259f4d32-4e07-4aa4-ad78-8dbb37d93977
https://ora.ox.ac.uk/objects/uuid:259f4d32-4e07-4aa4-ad78-8dbb37d93977
Publikováno v:
Solar Energy Materials and Solar Cells. 235:111448
Black silicon (b-Si) has been widely investigated as a potential replacement for more traditional antireflective schemes for silicon solar cells, such as random pyramids, due to its reduced broadband reflectance and improved light-trapping properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31ee60decdf3998a47c217db4bdcd4d6
https://doi.org/10.1016/j.solmat.2021.111448
https://doi.org/10.1016/j.solmat.2021.111448
Autor:
Edris Khorani, Stuart A. Boden, Peter J. Shaw, Pavlos G. Lagoudakis, Thomas M. Mercier, Chirenjeevi Krishnan, Michael E. Pollard, Martin D. B. Charlton, Tasmiat Rahman
Publikováno v:
Nano Energy. 84:105874
Reduction of surface reflection loss is crucial for high efficiency next generation Si solar cells. Surface texturing provides a viable method to reduce loss over the full solar bandwidth. Previous studies have concentrated on simple moth-eye silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9170455988ea3f1bc373cce62e7ef925
https://doi.org/10.1016/j.nanoen.2021.105874
https://doi.org/10.1016/j.nanoen.2021.105874
Autor:
Edris Khorani, Tudor E. Scheul, Stuart A. Boden, Antulio Tarazona, John Nutter, Tasmiat Rahman
Publikováno v:
Thin Solid Films. 705:137978
Hot wire chemical vapour deposition (HWCVD) is explored as a way of growing boron-doped silicon for photovoltaic devices. Deposition temperatures are measured using a custom-built monitoring system for two different filament configurations within the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e37feefa0c081fa27a25470859c5e77
https://doi.org/10.1016/j.tsf.2020.137978
https://doi.org/10.1016/j.tsf.2020.137978