Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Edmundas Širmulis"'
Autor:
Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Asta Grigucevičienė, Remigijus Juškėnas, Konstantinas Leinartas, Andžej Lučun, Kazimieras Petrauskas, Algirdas Selskis, Laurynas Staišiūnas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis
Publikováno v:
Materials, Vol 15, Iss 12, p 4300 (2022)
The high efficiency of perovskite solar cells strongly depends on the quality of perovskite films and carrier extraction layers. Here, we present the results of an investigation of the photoelectric properties of solar cells based on perovskite films
Externí odkaz:
https://doaj.org/article/4e55432de2764a188068b9b4ce497345
Autor:
Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Asta Grigucevičienė, Remigijus Juškėnas, Konstantinas Leinartas, Andžej Lučun, Kazimieras Petrauskas, Algirdas Selskis, Algirdas Sužiedėlis, Edmundas Širmulis
Publikováno v:
Materials, Vol 15, Iss 5, p 1936 (2022)
Performance of a perovskite solar cell is largely influenced by the optoelectronic properties of metal halide perovskite films. Here we study the influence of cesium concentration on morphology, crystal structure, photoluminescence and optical proper
Externí odkaz:
https://doaj.org/article/320fdcc577fe4b4b887405fd367b2d8b
Autor:
Jonas Gradauskas, Steponas Ašmontas, Algirdas Sužiedėlis, Aldis Šilėnas, Viktoras Vaičikauskas, Aurimas Čerškus, Edmundas Širmulis, Ovidijus Žalys, Oleksandr Masalskyi
Publikováno v:
Applied Sciences, Vol 10, Iss 21, p 7483 (2020)
In the present work we reveal the existence of the hot carrier photovoltage induced across a p–n junction in addition to the classical carrier generation-induced and thermalization-caused photovoltages. On the basis of the solution of the different
Externí odkaz:
https://doaj.org/article/7cc17516151d4f38bb8f8d8a810eb222
Autor:
Steponas Ašmontas, Maksimas Anbinderis, Jonas Gradauskas, Remigijus Juškėnas, Konstantinas Leinartas, Andžej Lučun, Algirdas Selskis, Laurynas Staišiūnas, Sandra Stanionytė, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis
Publikováno v:
Materials, Vol 13, Iss 12, p 2857 (2020)
Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films be
Externí odkaz:
https://doaj.org/article/2a2d43a56ceb44f4b3a9706c248f28e6
Autor:
Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis, Vladimir Umansky
Publikováno v:
Sensors, Vol 20, Iss 3, p 829 (2020)
We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above differe
Externí odkaz:
https://doaj.org/article/250a8e097a564424af52c65a3de54473
Autor:
Jonas GRADAUSKAS, Steponas AŠMONTAS, Edmundas ŠIRMULIS, Algirdas SUŽIEDĖLIS, Aurimas ČERŠKUS, Benas KUNDROTAS, Roma RINKEVIČIENĖ, Zinovy DASHEVSKY, Vladimir KASIYAN
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 123-125 (2014)
We report on the investigation of photoresponse signal arising across metal-PbTe structures exposed to CO2 laser radiation. Three different metals, Al, Au, and Bi, have been used for Schottky diode-like structure fabrication. The experimental investi
Externí odkaz:
https://doaj.org/article/a8c06c4ad46c438d93563ed6afbd202b
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 135-137 (2014)
The THz radiation reflection, absorption and emission spectra of conductive n-GaAs/air surface are considered. The influence of thermostimulated surface plasmon-phonon (SPP) polariton oscillations on THz radiation reflection, absorption and emission
Externí odkaz:
https://doaj.org/article/7541fb4096ff46e2afeae78b90343cfb
Autor:
O. Žalys, Edmundas Širmulis, Jonas Gradauskas, V. Lytovchenko, Algirdas Sužiedėlis, V. Kostylyov, L. Fedorenko, O. Masalskyi, S. Ašmontas, T. Gorbanyuk, V. Vlasiuk
Publikováno v:
Ukrainian Journal of Physical Optics. 21:207-214
Autor:
Remigijus Juškėnas, Algirdas Sužiedėlis, Laurynas Staišiūnas, Edmundas Širmulis, Sandra Stanionytė, A. Lučun, Jonas Gradauskas, Steponas Ašmontas, Konstantinas Leinartas, Maksimas Anbinderis, Algirdas Selskis, A. Šilėnas
Publikováno v:
Materials, Vol 13, Iss 2857, p 2857 (2020)
Materials
Volume 13
Issue 12
Materials
Volume 13
Issue 12
Niobium-doped titanium dioxide (Ti1&minus
xNbxO2) films were grown on p-type Si substrates at low temperature (170 °
C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductiv
xNbxO2) films were grown on p-type Si substrates at low temperature (170 °
C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductiv
Autor:
A. Šilėnas, Jonas Gradauskas, Viktoras Vaičikauskas, O. Žalys, Oleksandr Masalskyi, Edmundas Širmulis, Steponas Ašmontas, Aurimas Čerškus, Algirdas Sužiedėlis
Publikováno v:
Applied Sciences, Vol 10, Iss 7483, p 7483 (2020)
Applied Sciences
Volume 10
Issue 21
Applied Sciences
Volume 10
Issue 21
In the present work we reveal the existence of the hot carrier photovoltage induced across a p&ndash
n junction in addition to the classical carrier generation-induced and thermalization-caused photovoltages. On the basis of the solution of the
n junction in addition to the classical carrier generation-induced and thermalization-caused photovoltages. On the basis of the solution of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bbf47eed45cf165f57ee6ba28bb0c41
http://dspace.vgtu.lt/handle/1/4128
http://dspace.vgtu.lt/handle/1/4128