Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Edmund K. Banghart"'
Autor:
James P. Lavine, Edmund K. Banghart
Publikováno v:
IEEE Transactions on Electron Devices. 44:1593-1598
Numerical methods are presented to investigate charge transfer in charge-coupled devices (CCDs) when potential barriers or wells occur. A Monte Carlo simulation of electron thermal diffusion and field-aided drift is used to determine the time scale f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3b7e0618e2bac8ea8c701792172cab1
https://doi.org/10.1109/16.628809
https://doi.org/10.1109/16.628809
Autor:
Edmund K. Banghart, J.L. Gray
Publikováno v:
IEEE Transactions on Electron Devices. 39:1108-1114
An expression for the open-circuit voltage decay is derived to include the effects of plasma-induced bandgap narrowing, as well as the effects of Fermi-Dirac statistics. As a result, the range of validity of the open-circuit voltage decay technique i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73edbfb060198382d51480ac9fd8e047
https://doi.org/10.1109/16.129090
https://doi.org/10.1109/16.129090
Publikováno v:
Materials Science Forum. :499-504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcdebf02dcf1347e4c3438918e708e20
https://doi.org/10.4028/www.scientific.net/msf.83-87.499
https://doi.org/10.4028/www.scientific.net/msf.83-87.499
Publikováno v:
IEEE Transactions on Electron Devices. 38:1162-1174
Charge transfer in buried-channel charge-coupled devices (CCDs) is explored with a one-dimensional numerical model which describes the capture and emission of electrons from a shallow donor level in silicon through the use of the Shockley-Read-Hall g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a7467bf722ec06f1eca7b3158029d0
https://doi.org/10.1109/16.78394
https://doi.org/10.1109/16.78394
Autor:
Edmund K. Banghart, David Newell Nichols, Eric G. Stevens, Kwok Y. Wong, John P. Shepherd, Eric J. Meisenzahl
Publikováno v:
Digital Photography
This paper describes the design and performance of two new high-resolution full-frame architecture CCD imaging devices for use in professional color, digital still-imaging applications. These devices are made using 6.8 μm pixels and contain a dual-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a519c2da6b024de3a5bef1ba576931ac
https://doi.org/10.1117/12.651672
https://doi.org/10.1117/12.651672
Autor:
Carl J. Wordelman, Edmund K. Banghart
Publikováno v:
SPIE Proceedings.
Using Synopsys TCAD tools, several examples of advanced process and device modeling are presented for full-frame CCD image sensors. The topics covered in these examples include channel potential, charge capacity, charge transport, and charge blooming
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a941d99bd2964f6a5a13a894dc21f8ff
https://doi.org/10.1117/12.591143
https://doi.org/10.1117/12.591143
Autor:
Edmund K. Banghart, B.C. Burkey, E.A. Trabka, Eric G. Stevens, David J. Schneider, James P. Lavine
Publikováno v:
MRS Proceedings. 490
The three-dimensional Poisson's equation is solved by iterative methods and the resulting electric field is used in Newton's equation to simulate electron transfer in a charge-coupled device (CCD). The time dependence of charge transfer is studied th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c68c04155300800b8d53ff94fb2c746d
https://doi.org/10.1557/proc-490-251
https://doi.org/10.1557/proc-490-251
Publikováno v:
MRS Proceedings. 290
Many electron devices and chemical reactions depend on the escape rate of particles confined by potential wells. When the diffusion coefficient of the particle is small, the carrier continuity or the Smoluchowski equation is used to study the escape
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297fe1fcbf20334959aabe3513544e7a
https://doi.org/10.1557/proc-290-249
https://doi.org/10.1557/proc-290-249
Publikováno v:
Proceedings of SPIE; 4/19/2019, Vol. 11046, p1-14, 14p
Conference
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