Zobrazeno 1 - 10
of 304
pro vyhledávání: '"Edmund G. Seebauer"'
Autor:
Heonjae Jeong, Edmund G. Seebauer
Publikováno v:
The Journal of Physical Chemistry C. 126:20800-20806
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00d11499d30b9c7ba1e5dc7de421b35a
https://doi.org/10.1021/acs.jpcc.2c05648
https://doi.org/10.1021/acs.jpcc.2c05648
Autor:
Heonjae Jeong, Edmund G. Seebauer
Publikováno v:
The Journal of Physical Chemistry Letters. 13:9841-9847
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc00fa191ff82be9e6617d2135bb7bd
https://doi.org/10.1021/acs.jpclett.2c02490
https://doi.org/10.1021/acs.jpclett.2c02490
Publikováno v:
ACS Applied Materials & Interfaces. 14:34059-34068
Initial synthesis of semiconducting oxides leaves behind poorly controlled concentrations of unwanted atomic-scale defects that influence numerous electrical, optical, and reactivity properties. We have discovered through self-diffusion measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a24a61d0366630ff33b692f53f32c0ef
https://doi.org/10.1021/acsami.2c07672
https://doi.org/10.1021/acsami.2c07672
Autor:
Qilong Huang, Edmund G. Seebauer
Publikováno v:
The Journal of Physical Chemistry C. 126:1376-1388
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::091c9d65192a33dcd34bed78f2c933d3
https://doi.org/10.1021/acs.jpcc.1c09020
https://doi.org/10.1021/acs.jpcc.1c09020
Autor:
Heonjae Jeong, Edmund G. Seebauer
Publikováno v:
Journal of Vacuum Science & Technology A. 41:033203
Low bond coordination of surface atoms facilitates the injection of oxygen interstitial atoms into the bulk near room temperature from the clean surfaces of semiconducting metal oxides when exposed to liquid water, opening new prospects for postsynth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14404c186d05dc1032d9e24d80974478
https://doi.org/10.1116/6.0002467
https://doi.org/10.1116/6.0002467
Publikováno v:
Physical Chemistry Chemical Physics. 23:16423-16435
Oxygen vacancies (VO) influence many properties of ZnO in semiconductor devices, yet synthesis methods leave behind variable and unpredictable VO concentrations. Oxygen interstitials (Oi) move far more rapidly, so post-synthesis introduction of Oi to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f75bc8b8a353abe866a029ce3672dbe4
https://doi.org/10.1039/d1cp01204e
https://doi.org/10.1039/d1cp01204e
Publikováno v:
Langmuir. 36:12632-12648
Atomically clean surfaces of semiconducting oxides efficiently mediate the interconversion of gas-phase O2 and solid-phase oxygen interstitial atoms (Oi). First-principles calculations together with mesoscale microkinetic modeling are employed for Ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f364cfebfd514c6d33318dab119f08b
https://doi.org/10.1021/acs.langmuir.0c02195
https://doi.org/10.1021/acs.langmuir.0c02195
Publikováno v:
Physical chemistry chemical physics : PCCP. 23(30)
Oxygen vacancies (VO) influence many properties of ZnO in semiconductor devices, yet synthesis methods leave behind variable and unpredictable VO concentrations. Oxygen interstitials (Oi) move far more rapidly, so post-synthesis introduction of Oi to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ca7f645b3cb206fbddd4d2387b7456d7
https://pubmed.ncbi.nlm.nih.gov/34318811
https://pubmed.ncbi.nlm.nih.gov/34318811
Publikováno v:
Applied Surface Science. 470:854-860
The kinetics and diffusion mechanism of surface-injected oxygen interstitials (Oi) in TiO2(1 1 0) were investigated using a microkinetics model in order to determine the effects of different conditions upon to the Oi reaction-diffusion network. Exten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0d495cb3b2f5ea48cbcb81df123b29
https://doi.org/10.1016/j.apsusc.2018.11.123
https://doi.org/10.1016/j.apsusc.2018.11.123
Publikováno v:
The Journal of chemical physics. 153(12)
In the same way that gases interact with oxide semiconductor surfaces from above, point defects interact from below. Previous experiments have described defect-surface reactions for TiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f7e9da2888095e40233add2f3f699723
https://pubmed.ncbi.nlm.nih.gov/33003753
https://pubmed.ncbi.nlm.nih.gov/33003753