Zobrazeno 1 - 10
of 151
pro vyhledávání: '"Edmund, Dobročka"'
Autor:
Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2837 (2023)
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical char
Externí odkaz:
https://doaj.org/article/599297df99194f91b0d35d267721607d
Autor:
Dávid Ernst, Marek Kolenčík, Martin Šebesta, Ľuba Ďurišová, Samuel Kšiňan, Lenka Tomovičová, Nikola Kotlárová, Mária Kalúzová, Ivan Černý, Gabriela Kratošová, Veronika Žitniak Čurná, Jana Ivanič Porhajašová, Mária Babošová, Edmund Dobročka, Yu Qian, Sasikumar Swamiappan, Ramakanth Illa, Shankara Gayathri Radhakrishnan, B. Ratna Sunil, Ladislav Ducsay
Publikováno v:
Agronomy, Vol 13, Iss 10, p 2606 (2023)
One of the challenges in agriculture practices is guaranteeing an adequate and bioavailable phosphorus supply for plants on phosphorus-deficient soils. A promising alternative lies in the utilization of phosphate nano-fertilizers (NFs) through spray
Externí odkaz:
https://doaj.org/article/a0517df3f6264085bd85fdb0dd77447b
Autor:
Zuzana Šimonová, Veronika Krbečková, Zuzana Vilamová, Edmund Dobročka, Bořivoj Klejdus, Miroslav Cieslar, Ladislav Svoboda, Jiří Bednář, Richard Dvorský, Jana Seidlerová
Publikováno v:
ACS Omega, Vol 7, Iss 6, Pp 4850-4858 (2022)
Externí odkaz:
https://doaj.org/article/350e1392f9e84cde968c53501bde11a7
Autor:
Lenka Pribusová Slušná, Tatiana Vojteková, Jana Hrdá, Helena Pálková, Peter Siffalovic, Michaela Sojková, Karol Végsö, Peter Hutár, Edmund Dobročka, Marián Varga, Martin Hulman
Publikováno v:
ACS Omega, Vol 6, Iss 51, Pp 35398-35403 (2021)
Externí odkaz:
https://doaj.org/article/6caf879851b04231a6f0f243e1f9d4ec
Autor:
Dávid Ernst, Marek Kolenčík, Martin Šebesta, Ľuba Ďurišová, Hana Ďúranová, Samuel Kšiňan, Ramakanth Illa, Ivo Safarik, Ivan Černý, Gabriela Kratošová, Veronika Žitniak Čurná, Jana Ivanič Porhajašová, Mária Babošová, Huan Feng, Edmund Dobročka, Marek Bujdoš, Kristyna Zelena Pospiskova, Shadma Afzal, Nand K. Singh, Sasikumar Swamiappan, Elena Aydın
Publikováno v:
Plants, Vol 12, Iss 9, p 1789 (2023)
In environmental and agronomic settings, even minor imbalances can trigger a range of unpredicted responses. Despite the widespread use of metal-based nanoparticles (NPs) and new bio-nanofertilizers, their impact on crop production is absent in the l
Externí odkaz:
https://doaj.org/article/c46de14c8b194f339156d8e226406258
Autor:
Ján Kuzmík, Ondrej Pohorelec, Stanislav Hasenöhrl, Michal Blaho, Roman Stoklas, Edmund Dobročka, Alica Rosová, Michal Kučera, Filip Gucmann, Dagmar Gregušová, Marian Precner, Andrej Vincze
Publikováno v:
Materials, Vol 16, Iss 6, p 2250 (2023)
Metal organic chemical vapor deposition was used to grow N-polar In0.63Al0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and 130 nmol/min, reaching a Cp2Mg/III ratio of 8.3 × 10−3. The grain structure of
Externí odkaz:
https://doaj.org/article/85422b94d57f4b2aabbaa657ee3628b4
Autor:
Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan Ťapajna
Publikováno v:
Materials, Vol 16, Iss 1, p 20 (2022)
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Externí odkaz:
https://doaj.org/article/e5f936cc37314fd888339a03ebf4802b
Autor:
Alica Rosová, Edmund Dobročka, Peter Eliáš, Stanislav Hasenöhrl, Michal Kučera, Filip Gucmann, Ján Kuzmík
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3496 (2022)
In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10–25 nm)
Externí odkaz:
https://doaj.org/article/522bd0a21e9443d79040cf58c03ce23f
Autor:
Ivan Šimkovic, Filip Gucmann, Michal Hricovíni, Raniero Mendichi, Alberto Giacometti Schieroni, Daniele Piovani, Stefania Zappia, Edmund Dobročka, Jaroslav Filip, Miloš Hricovíni
Publikováno v:
Cellulose. 30:2023-2036
Autor:
Zuzana Šimonová, Ludmila Porubová, Adam Verner, Roman Gabor, Zuzana Vilamová, Edmund Dobročka, Miroslav Cieslar, Veronika Krbečková, Kateřina Peterek Dědková, Ladislav Svoboda, Jiří Bednář, Richard Dvorský, Jana Seidlerová
Publikováno v:
Fibers and Polymers. 23:2983-2993