Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Edith Kalweit"'
Autor:
Edith Kalweit, Jonas Ekman, Terry Marta, Sommy Bounnak, Premanand Venkatesh Chandramani, R.G. Rozier, Michael W. Haney, Mary K. Hibbs-Brenner, Jim Nohava, Fouad Kiamilev, Marc P. Christensen, B. Walterson, Predrag Milojkovic, Yue Liu
Publikováno v:
Journal of Optics A: Pure and Applied Optics. 1:228-232
Highly interconnected multiprocessor systems are now performance limited by the backplane interconnection bottleneck associated with planar interconnection technologies. Smart pixel throughput capabilities are projected to exceed I Thitls/cm2 [1] and
Autor:
T.J. Ireland, John A. Lehman, Terry Marta, B. Walterson, Yue Liu, Edith Kalweit, B.H. Tyrone, Julian P. G. Bristow, Sayan D. Mukherjee, T. Goldberg, Mary K. Hibbs-Brenner, Charles T. Sullivan, D.R. Singh
Publikováno v:
Journal of Lightwave Technology. 13:1041-1056
We report a fully packaged AlGaAs waveguide modulator array with four individually addressable elements operating at approximately 830 nm wavelength and a clock speed of 1 GHz. The modulators rely largely on the linear electro-optic effect for operat
Autor:
Edith Kalweit, Richard P. Schneider, Mary K. Hibbs-Brenner, H. Juergensen, J.A. Lott, Kevin L. Lear, Robert A. Morgan, Kent D. Choquette, R.A. Walterson, John A. Lehman
Publikováno v:
Microelectronics Journal. 25:747-755
Metalorganic vapour phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly used molecular beam epitaxial (MBE) techniques, includin
Autor:
Terry Marta, John A. Lehman, Robert A. Morgan, R. Gieske, R.A. Walterson, Sommy Bounnak, Mary K. Hibbs-Brenner, Edith Kalweit
Publikováno v:
IEEE Photonics Technology Letters. 8:7-9
Vertical-cavity surface-emitting lasers (VCSELs) emitting near 850 nm and fabricated with the metal-organic vapor phase epitaxy (MOVPE) epitaxial growth technique and a planar proton implant process have been demonstrated with excellent performance,
Autor:
Mary K. Hibbs-Brenner, John A. Lehman, Sommy Bounnak, Edith Kalweit, Terry Marta, Robert A. Morgan, R.A. Walterson
Publikováno v:
IEEE Photonics Technology Letters. 7:441-443
We report record temperature and wavelength range attained using MOVPE-grown AlGaAs vertical cavity surface-emitting lasers (VCSEL's). Unbonded continuous-wave lasing is achieved at temperatures up to 200/spl deg/C from these top-emitting VCSEL's and
Autor:
Terry Marta, T. Akinwande, Robert A. Morgan, Mary K. Hibbs-Brenner, Sommy Bounnak, John A. Lehman, Jim Nohava, R.A. Walterson, Edith Kalweit
Publikováno v:
Electronics Letters. 31:462-464
The authors present state-of-the-art performance obtained from producible, 850 nm, current-guided GaAs/AlGaAs, top-emitting vertical-cavity surface-emitting lasers (VCSELs). Record CW room-temperature device performance includes threshold voltages Vt
Autor:
Mary K. Hibbs-Brenner, Robert A. Morgan, Terry Marta, Edith Kalweit, R.A. Walterson, T. Akinwande, John A. Lehman
Publikováno v:
Applied Physics Letters. 66:1157-1159
A novel AlGaAs/AlAs–TiO2/SiO2 hybrid distributed Bragg reflector is implemented in a planar vertical cavity (top)‐surface emitting laser (VCSEL) to control emission (near 850 nm) to a single TEM00‐like mode. This structure exhibits ≳30 dB sid
Autor:
Terry Marta, Ralph H. Johnson, Helen M. Chanhvongsak, M. Ringle, Jae-Hyun Ryou, Gyoungwon Park, Hoki Kwon, Jin K. Kim, Edith Kalweit, Tzu-Yu Wang
Publikováno v:
IEEE/LEOS Summer Topi All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and Microcavity Lasers..
Summary form only given. Optical communication links between 100 meters and 10 kilometers will require new cost effective transceiver solutions. We have demonstrated single mode and high-speed modulation in long wavelength VCSELs with low threshold c
Autor:
James Orenstein, Ralph H. Johnson, David T. Mathes, Terry Marta, Edith Kalweit, Joe Gieske, Tzu-Yu Wang, Virgil J. Blasingame, Jim A. Tatum, Gyoungwon Park, Jin K. Kim, Mike D. Ringle, Helen M. Chanhvongsak, Jae-Hyun Ryou, Bo-Su Chen, Hoki Kwon
Publikováno v:
SPIE Proceedings.
In this paper we describe both the 1310 and 1550 nm VCSEL development work at Honeywell using both InP and GaAs substrates, and using both MOCVD and MBE. We describe the material systems, the designs, the growth techniques, and the promising results
Publikováno v:
2001 Digest of LEOS Summer Topical Meetings: Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components (IEEE Cat. No.01TH8572).
We present very simple implementations of mode filters that allow single mode operation of oxide-confined VCSELs with diameters 6 to 15 /spl mu/m. One implementation favored the fundamental mode by introducing mode selective reflectivity. The output