Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Edin Sijercic"'
Autor:
P.T. Leung, Edin Sijercic
Publikováno v:
Optics Communications. 370:198-202
The effects of extraneous surface charges on the anomalous extinction from metallic nanoparticles are studied via an application of the extended Mie theory by Bohren and Hunt. Due to the sensitivity of the higher multipolar resonance on the surface c
Autor:
Edin Sijercic, P.T. Leung
Publikováno v:
Applied Physics B. 124
The terahertz (THz) emission from quantum dots in close proximity to graphene-coated nanoparticles is studied via phenomenological modeling with particular interest in the possibility of enhancement for such emission via the excitation of the graphen
Publikováno v:
Solid-State Electronics. 49:1414-1421
A methodology for simulation of InSb devices in commercial drift–diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are
Autor:
Zheng-Hung Lin, P.T. Leung, Hai-Pang Chiang, W. S. Tse, Lu-Shing Liao, Edin Sijercic, C. W. Chen, Wen-Chi Lin
Publikováno v:
Applied optics. 46(22)
The possibility of constructing an optical sensor for temperature monitoring based on the Goos-Hanchen (GH) effect is explored using a theoretical model. This model considers the lateral shift of the incident beam upon reflection from a metal-dielect
Publikováno v:
Scopus-Elsevier
A methodology for simulation of InSb devices in standard drift-diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c2470771309aa90a49a225c7dd77f21
http://www.scopus.com/inward/record.url?eid=2-s2.0-8744294595&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-8744294595&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for extremely high frequency active devices operating at very low voltages. M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b52b0a6ad005c5da426e795fa7f680c3
http://www.scopus.com/inward/record.url?eid=2-s2.0-3042608723&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-3042608723&partnerID=MN8TOARS