Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Edgaras Jelmakas"'
Autor:
Gediminas Gervinskas, A. Kadys, T. Grinys, R. Tomašiūnas, M. Talaikis, D. Dobrovolskas, Saulius Juodkazis, M. Dmukauskas, Edgaras Jelmakas, Gediminas Niaura
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:14532-14541
A systematic study of the GaN epitaxial lateral overgrowth (ELO) of the focused ion beam (FIB) patterned sapphire substrate is presented. The FIB technology with its atom at a time removal principle is a flexible and high-resolution maskless processi
Autor:
Tadas Malinauskas, Saulius Juodkazis, Irena Savickaja, K. Juodkazis, Jurga Juodkazytė, T. Grinys, Benjaminas Šebeka, Arūnas Kadys, Edgaras Jelmakas
Publikováno v:
Solar Energy Materials and Solar Cells. 130:36-41
Performance of InxGa1−xN photo-electrodes at concentrations of In ranging from 0 to 100 % was investigated in basic and acidic solutions under 1 Sun illumination. Photocorrosive effects of InxGa1−xN samples in aqueous solutions are revealed and s
Autor:
Samuel Margueron, Marius Alsys, Gediminas Račiukaitis, R. Tomašiūnas, Edgaras Jelmakas, Paulius Gečys, Arūnas Kadys
Publikováno v:
physica status solidi (a). 211:2848-2853
Laser-patterned (0001) sapphire has been evaluated as a substrate to perform GaN epitaxial lateral overgrowth (ELO) by metal-organic chemical vapor deposition (MOCVD). Several conditions of trench ablation were tested by varying scanning speed and la
Autor:
Skirmantas Lapinskas, Chun-Han Lin, R. Tomašiūnas, Arūnas Kadys, I. Reklaitis, T. Grinys, Edgaras Jelmakas, Tadas Malinauskas, Chih-Chung Yang
Publikováno v:
physica status solidi c. 11:734-737
Blue GaN based light emitting diode structure was deposited by metal organic chemical vapour deposition technique. The conventional photolithography technique followed by dry etching and contact evaporation was used to fabricate the mesas of the opto
Publikováno v:
Optical Materials. 35:2171-2174
We report on photoinduced absorption bleaching of InAs/InGaAs chirped quantum dot semiconductor optical amplifier (QD SOA) waveguide devices investigated by the traditional femtosecond pump–probe technique applied for a waveguide configuration. To
Autor:
Gediminas Račiukaitis, R. Tomašiūnas, D. Dobrovolskas, Arūnas Kadys, Paulius Gečys, Edgaras Jelmakas, Marius Alsys
Publikováno v:
physica status solidi c. 9:2448-2451
Laser patterning technique as a flexible tool to grow high quality undoped gallium nitride (uGaN) on sapphire wafers is presented. A series of stripes were formed on sapphire wafer surface using Nd:YAG laser (100 kHz, 266 nm, 30 ps pulse) with variab
Autor:
Kestutis Juodkazis, Titas Gertus, Putinas Kalinauskas, Hiroaki Misawa, Edgaras Jelmakas, Saulius Juodkazis, Jurga Juodkazytė
Publikováno v:
Journal of Solid State Electrochemistry. 14:797-802
Influence of direct laser writing with femtosecond pulses on electrochemical etching of n-type low conductivity (>1,000 Ωcm) silicon is demonstrated. It has been shown that thermal 1-µm-thick SiO2 layer on silicon surface can be used as a protectiv
Autor:
A. Kadys, Shanti Bhattacharya, Gediminas Seniutinas, Anand Vijayakumar, Saulius Juodkazis, R. Tomašiūnas, Edgaras Jelmakas, Gediminas Gervinskas
Publikováno v:
SPIE Proceedings.
GaN light emitting diodes (LEDs) on sapphire substrates can be improved by micro-patterning substrate to perform epitaxial over-growth which drastically reduces defects' density in the light emitting region. We patterned Al 2 O 3 with focused ion bea
Autor:
Arūnas Kadys, P. Vitta, Edgaras Jelmakas, Eugenijus Gaubas, Tomas Ceponis, A. Tekorius, Saulius Juršėnas, A. Jasiunas, T. Malinauskas
Publikováno v:
AIP advances, Melville : American Institute of Physics, 2013, vol. 3, iss. 11, Art. no 112128 [p. 1-13]
AIP Advances, Vol 3, Iss 11, Pp 112128-112128-12 (2013)
AIP Advances, Vol 3, Iss 11, Pp 112128-112128-12 (2013)
The MOCVD grown GaN epi-layers of different thickness have been examined in order to clarify a role of surface recombination, to separate an impact of radiative and non-radiative recombination and disorder factors. The microwave probed –photoconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::747d4bf1aeac4b2f8866eba567661f7d
https://repository.vu.lt/VU:ELABAPDB4920840&prefLang=en_US
https://repository.vu.lt/VU:ELABAPDB4920840&prefLang=en_US
Publikováno v:
2009 11th International Conference on Transparent Optical Networks.
In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum