Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Eddy Kunnen"'
Autor:
Geert Mannaert, Lars-Ake Ragnarsson, Els Van Besien, A. Dangol, Adrian Chasin, Diana Tsvetanova, Soon Aik Chew, S. Kubicek, Romain Ritzenthaler, Harold Dekkers, Andriy Hikavyy, Dan Mocuta, Hans Mertens, Naoto Horiguchi, Yoshiaki Kikuchi, Tom Schram, Erik Rosseel, An De Keersgieter, Zheng Tao, Kathy Barla, Katia Devriendt, Eddy Kunnen, Toby Hopf, Min-Soo Kim, Kurt Wostyn, Steven Demuynck
Publikováno v:
ECS Transactions. 77:19-30
Gate-all-around (GAA) transistors based on vertically stacked horizontal nanowires are promising candidates to replace FinFETs in future CMOS technology nodes. First of all, GAA devices provide optimal electrostatic control over semiconducting nanowi
Autor:
Anne Vandooren, E. Vecchio, Niamh Waldron, Geert Hellings, W. Li, Nadine Collaert, Lan Peng, Eddy Kunnen, Liesbeth Witters, Fumihiro Inoue, Dan Mocuta
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
We are proposing a double gate junction-less device with a processing temperature compatible with state-of-the-art dense low k dielectric back-end of line copper process. The thermal stability of the back-end of line process was studied, showing no d
Autor:
Cedric Huyghebaert, A. Thiam, Benjamin Groven, Safak Sayan, Daniele Chiappe, Tom Schram, Katia Devriendt, Inge Asselberghs, Markus Heyne, M. Lux, Annelies Delabie, Eddy Kunnen, Iuliana Radu, Matty Caymax, Quentin Smets, Stephan Brus, A. Juncker, D. Lin
Publikováno v:
ESSDERC
For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools. The 2D material was deposited using either area selective chemical vapor deposition (CVD) or atomic layer deposition (ALD). No
Autor:
Kandabara Tapily, Gert J. Leusink, T. Hasegawa, Robert D. Clark, C. S. Wajda, Dan Mocuta, A. Dangol, G. Mannaert, S-A. Chew, Hao Yu, Eddy Kunnen, Erik Rosseel, Takahiro Hakamata, Steven Demuynck, Marc Schaekers, Naoto Horiguchi, K. De Meyer, Andriy Hikavyy
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
We report on Atomic Layer Deposition Titanium (ALD Ti) for FinFET source/drain contact applications. On planar test structures, we accurately benchmark contact resistivity (ρc) of ALD Ti, ∼1.4×10–9 Ω·cm2 on Si:P and ∼2.0×10–9 Ω·cm2 o
Autor:
Kathy Barla, G. Mannaert, Romain Ritzenthaler, Harold Dekkers, S. A. Chew, Hans Mertens, J. Geypen, Stefan Kubicek, Patrick Carolan, Adrian Chasin, Lars-Ake Ragnarsson, Tom Schram, Andriy Hikavyy, A. Dangol, Hugo Bender, Kurt Wostyn, Min-Soo Kim, Dan Mocuta, Naoto Horiguchi, Steven Demuynck, Katia Devriendt, T. Hopf, Erik Rosseel, Y. Kikuchi, N. Bosman, Eddy Kunnen
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We report on the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs, with matched threshold voltages (V t, sat ∼ 0.35 V) for N- and P-type devices. The Vt setting is enabled by nanowire-compatible dual-work-functi
Publikováno v:
IEEE Journal of Photovoltaics. 3:152-158
Surface texturing of crystalline silicon solar cells allows reduction of the reflection of sunlight and enhances photon generation. Plasma-based texturing offers significant advantages over the conventional wet approach, i.e., reduced Si consumption,
Autor:
Gerard T. Barkema, Herbert Struyf, Denis Shamiryan, Adam Urbanowicz, Mikhail R. Baklanov, Christian Maes, Eddy Kunnen
Publikováno v:
Microelectronic Engineering. 88:631-634
This work proposes an extended model that describes the propagation of damage in porous low-k material exposed to a plasma. Recent work has indicated that recombination and diffusion play a more dominant role than VUV light [1-5] in oxygen plasma ind
Autor:
Tatyana Rakhimova, Denis Shamiryan, Adam Urbanowicz, Herbert Struyf, Mikhail R. Baklanov, Alexis Franquet, Eddy Kunnen, Werner Boullart
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:450-459
Plasma damage of SiCOH low-k films in an oxygen plasma is studied using a transformer coupled plasma reactor. The concentration of oxygen atoms and O2+ ions is varied by using three different conditions: (1) bottom power only, (2) bottom and top powe
Autor:
Malgorzata Jurczak, M. Masahara, F. Neuilly, Liesbeth Witters, Serge Biesemans, E. Suzuki, Christa Vrancken, R. Surdeanu, Katia Devriendt, V.H. Nguyen, G. Van den bosch, Eddy Kunnen, G. Doornbos
Publikováno v:
Microelectronic Engineering. 84:2097-2100
Flexibly controllable threshold voltage (V"t"h) asymmetric gate oxide thickness (T"o"x) independent double-gate (DG) FinFETs (4T-FinFETs) have been demonstrated. Thin drive-gate oxide (HfO"2 or SiON or SiO"2) and slightly thick V"t"h-control-gate oxi
Autor:
Denis Shamiryan, Rita Rooyackers, T. Vandeweyer, J. Van Puymbroeck, Werner Boullart, Malgorzata Jurczak, Nadine Collaert, Bart Degroote, Eddy Kunnen, J. Wouters, Abhisek Dixit
Publikováno v:
Microelectronic Engineering. 84:609-618
We present a method to obtain Si-fins with a critical dimension (CD) below 20nm, separated by a minimum distance of 25nm and connected by a common source/drain (S/D) pad. The method comprises of recursive spacer defined patterning to quadruple the li