Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Eddy Jr, Charles R."'
Autor:
Myint, Peco, Woodward, Jeffrey M., Wang, Chenyu, Zhang, Xiaozhi, Wiegart, Lutz, Fluerasu, Andrei, Headrick, Randall L., Eddy, Jr., Charles R., Ludwig, Karl F.
Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. However, the addition of the plasma into the growth environment also complicates
Externí odkaz:
http://arxiv.org/abs/2306.13779
Autor:
Mastro, Michael A., Eddy, Jr., Charles R., Tadjer, Marko J., Hite, Jennifer K., Kim, Jihyun, Pearton, Stephen J.
Publikováno v:
J. Vac. Sci. Technol. A 39, 013408 (2021)
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($\beta$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates prod
Externí odkaz:
http://arxiv.org/abs/2105.03741
Publikováno v:
Advanced Materials 20(1):115 - 118 (2008)
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoreti
Externí odkaz:
http://arxiv.org/abs/2009.01768
Publikováno v:
physica status solidi (c) 11(3-4), 2014
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from a
Externí odkaz:
http://arxiv.org/abs/2009.01288
Autor:
Mastro, Michael A., Kim, Chul Soo, Kim, Mijin, Caldwell, Josh, Holm, Ron T., Vurgaftman, Igor, Kim, Jihyun, Eddy Jr., Charles R., Meyer, Jerry R.
Publikováno v:
Japanese Journal of Applied Physics 47(10):7827-7830, September 2008
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal m
Externí odkaz:
http://arxiv.org/abs/2009.01155
Autor:
Mastro, Michael A., Kim, Hong-Youl, Ahn, Jaehui, Simpkins, Blake, Pehrsson, Pehr, Kim, Jihyun, Hite, Jennifer K., Eddy Jr, Charles R.
Publikováno v:
IEEE Transactions of Electronic Devices 58(10):3401 (2011)
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage t
Externí odkaz:
http://arxiv.org/abs/2009.02142
Autor:
Mastro, Michael A., Nepal, Neeraj, Kub, Fritz, Hite, Jennifer K., Kim, J., Eddy Jr, Charles R.
Publikováno v:
MRS Online Proceeding Library Archive 1538:311-316, 2012
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional s
Externí odkaz:
http://arxiv.org/abs/2009.02143
Autor:
Mastro, Michael A., Anderson, Travis J., Tadjer, Marko J., Kub, Francis J., Hite, Jennifer K., Kim, Jihyun, Eddy Jr, Charles R.
Publikováno v:
physica status solidi (c) 11(3-4), 2014
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane
Externí odkaz:
http://arxiv.org/abs/2009.02144
Autor:
Mastro, Michael A., Kim, Byung-Jae, Freitas, Jr., J. A., Caldwell, Joshua D., Rendell, Ron, Hite, Jennifer, Eddy, Jr., Charles R., Kim, Jihyun
Publikováno v:
Proceedings of SPIE - The International Society for Optical Engineering 8096 (2011)
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of
Externí odkaz:
http://arxiv.org/abs/2009.02141
Autor:
Tadjer, Marko J., Wheeler, Virginia D., Downey, Brian P., Robinson, Zachary R., Meyer, David J., Eddy, Jr., Charles R., Kub, Fritz J.
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the c
Externí odkaz:
http://arxiv.org/abs/1602.06340