Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Eddy Jr, C. R."'
Autor:
Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy Jr., C. R., Gaskill, D. K., Henry, R. L., Twigg, M. E.
Publikováno v:
Applied Physics Letters 87(24):241103 - 241103-3, 2005
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflecta
Externí odkaz:
http://arxiv.org/abs/2009.01635
Autor:
Mastro, M. A., Holm, R. T., Bassim, N. D., Gaskill, D. K., Culbertson, J. C., Fatemi, M., Eddy Jr., C. R., Henry, R. L., Twigg, M. E.
Publikováno v:
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 24(4), 2006
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green r
Externí odkaz:
http://arxiv.org/abs/2009.01207
Autor:
Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy, Jr., C. R., Henry, R. L., Twigg, M. E., Rosenberg, A.
Publikováno v:
Japanese Journal of Applied Physics 45(29-32), 2006
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wa
Externí odkaz:
http://arxiv.org/abs/2009.01198
Autor:
Mastro, M. A., Hite, J. K., Eddy, Jr., C. R., Tadjer, M. J., Pearton, S. J., Ren, F., Kim, J.
Publikováno v:
International Journal of High Speed Electronics and Systems 28(01n02):1940007, February 2019
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga
Externí odkaz:
http://arxiv.org/abs/2009.01117
Autor:
Mukherjee, A., Ellis, C. T., Arik, M. M., Taheri, P., Oliverio, E., Fowler, P., Tischler, J. G., Liu, Y., Glaser, E. R., Myers-Ward, R. L., Tedesco, J. L., Eddy Jr, C. R., Gaskill, D. Kurt, Zeng, H., Wang, G., Cerne, J.
We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a fact
Externí odkaz:
http://arxiv.org/abs/1901.06536
Autor:
Xu, P., Ackerman, M. L., Barber, S. D., Schoelz, J. K., Qi, D., Thibado, P. M., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy, Jr., C. R., Gaskill, D. K.
Publikováno v:
Japanese Journal of Applied Physics 52, 035104 (2013)
Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morpho
Externí odkaz:
http://arxiv.org/abs/1501.06903
Autor:
Xu, P., Barber, S. D., Schoelz, J. K., Ackerman, M. L., Qi, D., Thibado, P. M., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy Jr., C. R., Gaskill, D. K.
Publikováno v:
Journal of Vacuum Science and Technology B 31, 04D101 (2013)
Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller tha
Externí odkaz:
http://arxiv.org/abs/1501.05862
Autor:
Xu, P., Ackerman, M. L., Barber, S. D., Schoelz, J. K., Thibado, P. M., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy Jr., C. R., Gaskill, D. K.
Publikováno v:
Surface Science 617, 113 (2013)
Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle o
Externí odkaz:
http://arxiv.org/abs/1501.04872
Autor:
Xu, P., Qi, D., Schoelz, J. K., Thompson, J., Thibado, P. M., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy Jr., C. R., Gaskill, D. K., Neek-Amal, M., Peeters, F. M.
Publikováno v:
Carbon 50, 75 (2014)
Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moir\'e patterns of different s
Externí odkaz:
http://arxiv.org/abs/1412.8680
Autor:
Nath, A., Currie, M., Wheeler, V. D., Tadjer, M. J., Koehler, A. D., Robinson, Z. R., Sridhara, K., Hernandez, S. C., Wollmershauser, J. A., Robinson, J. T, Myers-Ward, R. L., Eddy, Jr., C. R., Rao, M. V., Gaskill, D. K.
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance.
Externí odkaz:
http://arxiv.org/abs/1411.5114