Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Eddy Aeloiza"'
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c73dd5bc5acdf2674d4e725e3dfab25
https://doi.org/10.1109/ecce50734.2022.9947939
https://doi.org/10.1109/ecce50734.2022.9947939
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
To measure and characterize power loss and efficiency of highly efficient power semiconductors such as SiC MOSFET modules, a simple and accurate inverter power loss measurement method is proposed. The technique is based on electrical measurement of D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b0a0af0778e18827c6d70773499008
https://doi.org/10.1109/apec42165.2021.9487235
https://doi.org/10.1109/apec42165.2021.9487235
Publikováno v:
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia).
Partially rated power electronic modules (PEMs) can be interfaced with conventional line-frequency transformers (LFTs) to realize hybrid transformers (HTs). Hybrid transformers possess higher controllability as compared to conventional LFTs. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced70e95a4d60490bfedb167a2698486
https://doi.org/10.1109/ecce-asia49820.2021.9479434
https://doi.org/10.1109/ecce-asia49820.2021.9479434
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
A hybrid transformer (HT) is implemented by augmenting the traditional low frequency transformer with a partially rated power electronic (PE) module. This paper presents a control methodology that enables the hybrid transformer to perform harmonic is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a52d7aff46c0444d8e19c89db9617d78
https://doi.org/10.1109/ecce44975.2020.9235972
https://doi.org/10.1109/ecce44975.2020.9235972
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
The 650 V and 1200 V SiC MOSFETs have gained significant market acceptance in the recent years, mainly, due to the promise of higher power conversion efficiency and power density. However, the lack of field-proven long-term reliability data of SiC MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d7ad3db2606716b7ef1375e82fbcad
https://doi.org/10.1109/ecce44975.2020.9236273
https://doi.org/10.1109/ecce44975.2020.9236273
Publikováno v:
Materials Science Forum. 924:818-821
An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f0b7ba58dc103ec28eeba8a128ae4a5
https://doi.org/10.4028/www.scientific.net/msf.924.818
https://doi.org/10.4028/www.scientific.net/msf.924.818
Autor:
Michael T. Daniel, Harish S. Krishnamoorthy, Liming Liu, Eddy Aeloiza, Prasad Enjeti, Jorge Ramos-Ruiz
Publikováno v:
IEEE Transactions on Industrial Electronics. 64:8939-8947
This paper investigates a dc collection grid architecture to process energy from offshore wind turbine generators (WTGs), which can be further interfaced with the shore via a high-voltage dc network. In the proposed approach, WTG output voltage is re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f36fb70f9b19cc27bc1caca9fcf5e8a9
https://doi.org/10.1109/tie.2017.2652405
https://doi.org/10.1109/tie.2017.2652405
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Using SiC freewheeling diodes with Si IGBTs is a typical cost-effective alternative to full-SiC power electronics. The benefit of SiC JBS diodes in switching losses reduction, due to zero reverse recovery, has been widely reported in literature. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33613d001e968fd8ac923595cbe22425
https://doi.org/10.1109/wipda46397.2019.8998944
https://doi.org/10.1109/wipda46397.2019.8998944
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Growing commercialization of SiC JFETs with low conduction losses is enabling their potential in non-traditional application spaces such as AC switchgear and controlgear. However, a key performance requirement such as surge current capability of thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de949fbe022dec2a2092bc6456b1fb7
https://doi.org/10.1109/wipda46397.2019.8998815
https://doi.org/10.1109/wipda46397.2019.8998815
Autor:
Veli-Matti Leppanen, Arun Kadavelugu, Mika Niemi, Markus Oinonen, Rostan Rodrigues, Eddy Aeloiza
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
During the last decade, utilization of SiC devices in power electronics applications has steadily increased. For high power and low voltage applications, it is inevitable the paralleling of high current semiconductor modules. The superb advantages of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee86a39bf85be9c2663371de10d2faef
https://doi.org/10.1109/ecce.2019.8912921
https://doi.org/10.1109/ecce.2019.8912921