Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Eddine, Zane Jamal"'
Autor:
Rahman, Sheikh Ifatur, Awwad, Mohammad, Joishi, Chandan, Eddine, Zane-Jamal, Gunning, Brendan, Armstrong, Andrew, Rajan, Siddharth
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN s
Externí odkaz:
http://arxiv.org/abs/2404.05095
Autor:
Kalarickal, Nidhin Kurian, Fiedler, Andreas, Dhara, Sushovan, Rahman, Mohammad Wahidur, Kim, Taeyoung, Xia, Zhanbo, Eddine, Zane Jamal, Dheenan, Ashok, Brenner, Mark, Rajan, Siddharth
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $\beta$-Ga2O3. Etching of $\beta$-Ga2O3 due to excess Ga adatoms on the epilayer surface had be
Externí odkaz:
http://arxiv.org/abs/2105.09503
Autor:
Kalarickal, Nidhin Kurian, Fiedler, Andreas, Dhara, Sushovan, Huang, Hsien-Lien, Bhuiyan, A F M Anhar Uddin, Rahman, Mohammad Wahidur, Kim, Taeyoung, Xia, Zhanbo, Eddine, Zane Jamal, Dheenan, Ashok, Brenner, Mark, Zhao, Hongping, Hwang, Jinwoo, Rajan, Siddharth
Publikováno v:
Applied Physics Letters; 10/14/2021, Vol. 119 Issue 12, p1-6, 6p
