Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ed Kaminsky"'
Publikováno v:
Materials Science Forum. :1239-1242
4H-SiC MESFETs were fabricated using a bilayer dry thermal oxide/low-pressure chemical vapor deposited (LPCVD) silicon nitride for surface passivation. The passivation dielectric consists of a 20 nm thick dry thermal oxide covered by a 45 nm thick LP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca91178d89705953d55eac82f286033e
https://doi.org/10.4028/www.scientific.net/msf.527-529.1239
https://doi.org/10.4028/www.scientific.net/msf.527-529.1239
Publikováno v:
Solid-State Electronics. 50:1425-1429
Two alloyed ohmic contact structures for AlGaN/GaN–Ti/Al/Ti/Au and Ti/Al/Mo/Au were studied. Both structures were optimized for minimum ohmic contact resistance. Structures grown on sapphire and SiC substrates were used to investigate structural pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3256374ae51beb3e69a5abfda06fe237
https://doi.org/10.1016/j.sse.2006.07.003
https://doi.org/10.1016/j.sse.2006.07.003
Publikováno v:
Materials Science Forum. :589-592
Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and interface-trapped charge, Qit. Steam-grown oxides have a fixed charge density of Qf=-1x1012 cm-2, and a net interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59800d456896180f9309ee18dd14c79c
https://doi.org/10.4028/www.scientific.net/msf.483-485.589
https://doi.org/10.4028/www.scientific.net/msf.483-485.589
Autor:
V. Tilak, Ed Kaminsky, A. P. Zhang, J. C. Grande, Julie Teetsov, Larry B. Rowland, A. Vertiatchikh, L.F. Eastman
Publikováno v:
Journal of Electronic Materials. 32:388-394
Device performance and defects in AlGaN/GaN high-electron mobility transistors (HEMTs) have been correlated. Surface depressions and threading dislocations, revealed by optical-defect mapping and atomic force microscopy (AFM), compromised the effecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c017015ec0ff4c3555115c1def054d4e
https://doi.org/10.1007/s11664-003-0163-6
https://doi.org/10.1007/s11664-003-0163-6
Autor:
Ed Kaminsky, J. L. Garrett, B.J. Edward, Richard Alfred Beaupre, J. Cook, Larry B. Rowland, A.F. Allen, J. Foppes, Ho-Young Cha, Jesse B. Tucker, James W. Kretchmer, A. Vertiatchikh, Goutam Koley, A. P. Zhang
Publikováno v:
Journal of Electronic Materials. 32:437-443
The performances of silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs) fabricated on conventional V-doped semi-insulating substrates and new V-free semi-insulating substrates have been compared. The V-free 4H-SiC substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc059d54860f17761d5e3375d54767b6
https://doi.org/10.1007/s11664-003-0174-3
https://doi.org/10.1007/s11664-003-0174-3
