Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Ecron Thompson"'
Autor:
Se-Hyuk Im, Logan Simpson, Satoshi Iino, Anshuman Cherala, Jin Choi, Mario J. Meissl, Ecron Thompson, Mitsura Hiura
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020.
Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8373e7981eb8e09973ed50f641fc4887
https://doi.org/10.1117/12.2552023
https://doi.org/10.1117/12.2552023
Autor:
Ecron Thompson, Ahmed Hussein, Mitsuru Hiura, Satoshi Iino, Anshuman Cherala, Mario J. Meissl, Jin Choi, Se-Hyuk Im, Ryan Minter, Logan Simpson
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f8180af4d9129e480c49b94c895c10e
https://doi.org/10.1117/12.2515146
https://doi.org/10.1117/12.2515146
Autor:
Brian Fletcher, Van N. Truskett, Niyaz Khusnatdinov, Whitney Longsine, Wei Zhang, Tim Stachowiak, Dwayne L. LaBrake, Ecron Thompson, Zhengmao Ye, J. W. Irving, Weijun Liu, Matthew C. Traub
Publikováno v:
SPIE Proceedings.
Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5712d3283ebb51563e1bc1bb2f09484c
https://doi.org/10.1117/12.2219161
https://doi.org/10.1117/12.2219161
Publikováno v:
Microelectronic Engineering. 86:709-713
Step and Flash Imprint Lithography (S-FIL^(R)) is a unique method that has been designed from the beginning to enable precise overlay for creating multi-level devices. However, since the technology is 1X, it is critical to address the infrastructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f84b095147a50bcf02b8f8019d5c468d
https://doi.org/10.1016/j.mee.2008.11.071
https://doi.org/10.1016/j.mee.2008.11.071
Autor:
Yuko Sakai, Joseph Perez, Akjko Fujii, Ecron Thompson, Kosta Selinidis, John G. Maltabes, Douglas J. Resnick, Sidlgata V. Sreenivasan, Gerard M. Schmid, Shiho Sasaki, Naoya Hayashi, Nick Stacey
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2410-2415
Imprint lithography has been included on the ITRS lithography roadmap at the 32, 22, and 16nm nodes. Step and flash imprint lithography (S-FIL®) is a unique method that has been designed from the beginning to enable precise overlay for creating mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e83a24c1c39c6e560d452d877d2d04d
https://doi.org/10.1116/1.2976573
https://doi.org/10.1116/1.2976573
Publikováno v:
Microelectronic Engineering. 84:885-890
Typically, the Step and Flash Imprint Lithography (S-FIL^T^M) process uses field-to-field drop dispensing of UV-curable liquids for step-and-repeat patterning. Several applications, including patterned magnetic media, photonic crystals, and wire grid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3998d7a492a300efa127fff3e80980d
https://doi.org/10.1016/j.mee.2007.01.060
https://doi.org/10.1016/j.mee.2007.01.060
Autor:
Gerard M. Schmid, Douglas J. Resnick, Nick Stacey, Ecron Thompson, Deirdre L. Olynick, Erik H. Anderson
Publikováno v:
Microelectronic Engineering. 84:853-859
Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22nm nodes. Step and flash imprint lithography (S-FIL^(TM)) is a unique method that has been designed from the beginning to enable precise overlay for creating multil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cbafeeffde0452f060b02390833ba8b
https://doi.org/10.1016/j.mee.2007.01.038
https://doi.org/10.1016/j.mee.2007.01.038
Autor:
Paul Hellebrekers, Paul Hofemann, Ecron Thompson, Sidlgata V. Sreenivasan, Douglas J. Resnick, Dwayne L. LaBrake
Publikováno v:
SPIE Proceedings.
The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1a10095f9e80eecbd297ea0b740d25
https://doi.org/10.1117/12.2029275
https://doi.org/10.1117/12.2029275
Autor:
Long Ma, Sidlgata V. Sreenivasan, Fei Wang, Douglas J. Resnick, Jack Jau, Hong Xiao, Ecron Thompson, Kosta Selinidis, Yan Zhao
Publikováno v:
SPIE Proceedings.
We used electron beam (e-beam) inspection (EBI) systems to inspect nano imprint lithography (NIL) resist wafers with programmed defects. EBI with 10nm pixel sizes has been demonstrated and capability of capturing program defects sized as small as 4nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ebacd17d5aeac7a480ed565c769c697
https://doi.org/10.1117/12.833419
https://doi.org/10.1117/12.833419
Autor:
Sidlgata V. Sreenivasan, Douglas J. Resnick, Marcus Pritschow, Mathias Irmscher, Holger Sailer, Kosta Selinidis, Joerg Butschke, Ecron Thompson, Harald Dobberstein
Publikováno v:
SPIE Proceedings.
Step and Flash Imprint involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e17d1d85393c415ced9f48ca1c17de1c
https://doi.org/10.1117/12.824264
https://doi.org/10.1117/12.824264