Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization.

Autor: Gu, S., Dunton, S. V., Walker, A. J., Nallamothu, S., Chen, E. H., Mahajani, M., Herner, S. B., Eckert, V. L., Hu, S., Konevecki, M., Petti, C., Radigan, S., Raghuram, U., Vyvoda, M. A.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2005, Vol. 23 Issue 5, p2184-2188, 5p