Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Eckard Deichsel"'
Publikováno v:
Optics & Laser Technology. 87:87-93
In this paper the morphology of the laser cut front generated by fibre lasers was investigated by observation of the ‘frozen’ cut front, additionally high speed imaging (HSI) was employed to study ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af1c536800fb67b8dfbfe273a3e7b34
https://doi.org/10.1016/j.optlastec.2016.08.002
https://doi.org/10.1016/j.optlastec.2016.08.002
Publikováno v:
Physics procedia 78, 99-109 (2015). doi:10.1016/j.phpro.2015.11.022 special issue: "15th Nordic Laser Materials Processing Conference, Nolamp 15 / Edited by Antti Salminen"
15. Nordic Laser Materials Processing Conference, Nolamp, Lappeenranta, Finland, 2015-08-25-2015-08-28
15. Nordic Laser Materials Processing Conference, Nolamp, Lappeenranta, Finland, 2015-08-25-2015-08-28
15th Nordic Laser Materials Processing Conference, Nolamp 15 / Edited by Antti Salminen 15th Nordic Laser Materials Processing Conference, Nolamp, Lappeenranta, Finland, 25 Aug 2015 - 28 Aug 2015; Amsterdam [u.a.] : Elsevier, Physics procedia, 78, 99
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3644031d7e04f8e745f7c1810cdf0507
Publikováno v:
Journal of Manufacturing Science and Engineering. 138
This paper investigates the effect of material type, material thickness, laser wavelength, and laser power on the efficiency of the cutting process for industrial state-of-the-art cutting machines. The cutting efficiency is defined in its most basic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cce04bec6b2ab0daf298615570ed0583
https://doi.org/10.1115/1.4031190
https://doi.org/10.1115/1.4031190
Autor:
Tomasz J. Ochalski, Eckard Deichsel, Tomasz Piwonski, Maciej Bugajski, Brian Corbett, Dorota Wawer, P. Unger
Publikováno v:
Materials Science in Semiconductor Processing. 9:188-197
We have developed new technique to monitor the facet heating in semiconductor lasers and to correlate these measurements with device performance and reliability. The method is based on thermoreflectance (TR), which is a modulation technique relaying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8476d3a59e51d22362b941c21d93a093
https://doi.org/10.1016/j.mssp.2006.01.072
https://doi.org/10.1016/j.mssp.2006.01.072
Autor:
Gerhard Franz, Eckard Deichsel
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:2201-2205
The aging behavior of edge emitting laser diodes based on GaAs∕AlGaAs is investigated by comparing devices with facets that are alternatively cleaved or dry etched and consecutively treated with H2S. In this work we demonstrate that an in situ expo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d01fdb41cdfe9c5729820ef98805c577
https://doi.org/10.1116/1.1786307
https://doi.org/10.1116/1.1786307
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:106-110
High-power broad-area InGaAs-AlGaAs-GaAs single-quantum-well separate-confinement heterostructure (SQW-GRINSCH) lasers with dry-etched mirror facets and integrated monitor photodiodes have been investigated. A multilayer resist system has been employ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::908f3b0a1d88135a9910d29a9a3477c5
https://doi.org/10.1109/2944.954118
https://doi.org/10.1109/2944.954118
Publikováno v:
Microelectronic Engineering. 46:323-326
The characteristics of Cl"2?Ar chemically-assisted ion-beam etching processes for GaN and GaAs are reported. The etch rate and anisotropy have been investigated varying ion energy, tilt angle, substrate temperature, and Cl"2 flow. Vertical and smooth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c53103957e108debde594f36ba2ccf7
https://doi.org/10.1016/s0167-9317(99)00095-7
https://doi.org/10.1016/s0167-9317(99)00095-7
Publikováno v:
Journal of Crystal Growth. :882-885
We report on the growth and fabrication of InGaAs/AlGaAs strained quantum-well (QW) laser diodes with a maximum wallplug efficiency of 63%. The epitaxial graded-index separate-confinement heterostructure (GRINSCH) includes a single 8 nm InGaAs quantu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a9a85f0be6eaf77fc8ab8e00d350bed
https://doi.org/10.1016/s0022-0248(98)01491-2
https://doi.org/10.1016/s0022-0248(98)01491-2
Publikováno v:
2009 High Power Diode Lasers and Systems Conference.
Ramping up the power is only one aspect of further diode laser development. Diverging needs from different widely adopted pump principles (thin disk, fibre, and slab) lead to different challenges and approaches in diode lasers development.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d0aecb103b410cc4853d11613375b65
https://doi.org/10.1109/hpd.2009.5364510
https://doi.org/10.1109/hpd.2009.5364510
Publikováno v:
1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference.
A novel high-power optical data transmission system is presented, which consists of a vertical-cavity surface-emitting laser (VCSEL) and a high-power tapered semiconductor amplifier. With this VCSEL master-oscillator power-amplifier system (VCSEL-MOP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59ba5bbda0546009cacf08e568b26bb
https://doi.org/10.1109/imoc.1999.867088
https://doi.org/10.1109/imoc.1999.867088