Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Ebo H. Croffie"'
Autor:
Andrew R. Neureuther, James R. Sweeney, O. Dimov, R. Cirelli, Omkaram Nalamasu, Pat G. Watson, Ebo H. Croffie, Allen H. Gabor, F. M. Houlihan, M. Cheng, I. Rushkin
Publikováno v:
Microelectronic Engineering. 53:437-442
A new TCAD software tool named STORM (SimulationTOols forResistModels) has been developed to support the quantitative modeling of resist processes in deep submicron lithography. Models for post exposure bake, silylation, wet development and dry devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe774225216cfcca817baf72fbb9b91e
https://doi.org/10.1016/s0167-9317(00)00351-8
https://doi.org/10.1016/s0167-9317(00)00351-8
Autor:
Jason D. Hintersteiner, Nabila Baba-Ali, Sherman K. Poultney, Azat Latypov, Ronald P. Albright, Wenceslao A. Cebuhar, Ebo H. Croffie, Elizabeth Stone, Nicholas K. Eib
Publikováno v:
SPIE Proceedings.
In Optical Maskless Lithography, the die pattern to be printed is generated by a contrast device, known as a Spatial Light Modulator. The contrast device consists of a multitude of micro-mirror pixels that are independently actuated. Different physic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a864fd60a74a0aa7c31f29565a4f8f
https://doi.org/10.1117/12.658690
https://doi.org/10.1117/12.658690
Autor:
Ebo H. Croffie, Nicholas K. Eib
Publikováno v:
Optical Microlithography XVIII.
Ever-increasing reticle cost makes optical maskless lithography an attractive alternative to mask-based technologies, particularly for low-volume runs such as prototypes, ASIC personalization, and engineering short loops. If the resolution and imagin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e87cb32fc09d9eb7dbd89e6316588c15
https://doi.org/10.1117/12.601041
https://doi.org/10.1117/12.601041
Publikováno v:
SPIE Proceedings.
A methodology and a Monte Carlo simulation flow with integrated LSI Logic's OPC package, Molotof, was applied to the 65nm poly line sensitivity analysis. Strong phase shift mask (sPSM) manufacturing specifications were optimized to obtain image criti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6193a48cb16fa5eb19abd476de7dd94f
https://doi.org/10.1117/12.570283
https://doi.org/10.1117/12.570283
Publikováno v:
SPIE Proceedings.
The existing approaches to lithography model generation rely heavily on one-dimensional (1D) Scanning Electron Microscope (SEM) measurements to characterize a two-dimensional (2D) process. Traditional 1-D techniques require measuring an exhaustive te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b412a0fc85c640520bd2f657a1d42a7
https://doi.org/10.1117/12.538244
https://doi.org/10.1117/12.538244
Publikováno v:
SPIE Proceedings.
Production readiness of phase-edge/chromeless reticles employing off-axis illuminations for 65nm node lithography is assessed through evaluation of mask design conversion and critical layer lithography performance. Using ASML /1100ArF scanners, we ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2e91e0f89b476f1195aaa73bd9737b3
https://doi.org/10.1117/12.536172
https://doi.org/10.1117/12.536172
Publikováno v:
SPIE Proceedings.
A new resist threshold model based on image behaviors on directions parallel as well as normal to feature edges has been developed for predicting critical dimensions (CD) of two-dimension patterns. In this new model (2D-RTM), resist threshold is assu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1edcca9399eb0d2cd34e2ef788044723
https://doi.org/10.1117/12.535564
https://doi.org/10.1117/12.535564
Publikováno v:
SPIE Proceedings.
LSI Logic's OPC package, Molotof, integrated into several RET flows has been successfully applied for strong phase shift mask simulation and optimization. Molotof simulator was used to predict sPSM imaging performance in response to statistical error
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f46dba3d3637327759e508b77ce1b94
https://doi.org/10.1117/12.556623
https://doi.org/10.1117/12.556623
Autor:
Neal P. Callan, Ebo H. Croffie
Publikováno v:
SPIE Proceedings.
Manufacturability and economical viability of etched quartz solutions for 65nm node critical layer lithography is assessed through evaluation of mask technology conversion complexity, mask process complexity, wafer processing cost and SRAM cell criti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7109657ddb049a4408680bc71fefcde9
https://doi.org/10.1117/12.518322
https://doi.org/10.1117/12.518322
Autor:
Kevin Cummings, Torbjorn Sandstrom, Azat Latypov, Neal P. Callan, Ebo H. Croffie, Jason D. Hintersteiner, Nick Eib, Arno Bleeker, Nabila Baba-Ali
Publikováno v:
SPIE Proceedings.
Maskless lithography imaging based on SLM tilt mirror architecture requires illumination of light on a non-planar reflective topography. While the actual mirror dimensions can be much larger than the wavelength of light, the spacing between mirrors a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5070d9efcabdca22af5541698df148d7
https://doi.org/10.1117/12.518747
https://doi.org/10.1117/12.518747