Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy

Autor: Porti i Pujal, Marc, Nafría i Maqueda, Montserrat, Aymerich Humet, Xavier, Olbrich, A., Ebersberger, B., American Physical Society

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)

A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2da3563d33a55282164fc39f449fc411
http://hdl.handle.net/2072/401817

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Does the composition of regional knowledge bases influence extra-regional collaboration for innovation?

Autor: Ebersberger, B.¹ (AUTHOR) bernd.ebersberger@mci.edu, Herstad, S. J.^2,3 (AUTHOR), Koller, C.¹ (AUTHOR)

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