Zobrazeno 1 - 10
of 1 215
pro vyhledávání: '"Eberl, K."'
Autor:
Schröer, D., Greentree, A. D., Gaudreau, L., Eberl, K., Hollenberg, L. C. L., Kotthaus, J. P., Ludwig, S.
Publikováno v:
Phys. Rev. B 76, 075306 (2007)
A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of few electro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703450
Publikováno v:
Journal of Physics: Condensed Matter 19, 236202 (2007)
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide range of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607248
Publikováno v:
Phys. Rev. B 74, 233301 (2006)
We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a function of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607044
Autor:
Giudici, P., Goñi, A. R., Bolcatto, P. G., Proetto, C. R., Eberl, K., Hauser, M., Thomsen, C.
Recent claims of an experimental demonstration of spontaneous spin polarisation in dilute electron gases \cite{young99} revived long standing theoretical discussions \cite{ceper99,bloch}. In two dimensions, the stabilisation of a ferromagnetic fluid
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603773
Publikováno v:
Physica E 34, 488 (2006)
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric g
Externí odkaz:
http://arxiv.org/abs/cond-mat/0507101
Publikováno v:
Physical Review B 72, 081310(R) (2005)
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the low-energy sp
Externí odkaz:
http://arxiv.org/abs/cond-mat/0501012
Publikováno v:
Phys. Rev. B 71, 155328 (2005)
With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low elect
Externí odkaz:
http://arxiv.org/abs/cond-mat/0405215
Autor:
Goñi, A. R., Giudici, P., Reboredo, F. A., Proetto, C. R., Thomsen, C., Eberl, K., Hauser, M.
Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly populated. Dire
Externí odkaz:
http://arxiv.org/abs/cond-mat/0404145
A two quantum-dot device is coupled in parallel for studying the competition between the pseudo-spin Kondo effect and strongly hybridized molecular states. Cryogenic measurements are performed in the regime of weak coupling of the two dots to lead st
Externí odkaz:
http://arxiv.org/abs/cond-mat/0311023