Aperiodic x-ray multilayer interference coatings with high reflectance and large field of view

Autor: Christopher C. Walton, Tom Pardini, Catherine Burcklen, Paul B. Mirkarimi, Regina Soufli, Jeff C. Robinson, Stefan P. Hau-Riege, Eberhard Spiller, Jennifer B. Alameda

Publikováno v: Advances in Optical Thin Films VI.

Aperiodic multilayer interference coatings are of particular interest for a variety of hard x-ray applications, including target diagnostics, astrophysics, high energy physics and free-electron lasers. Such applications require large field of view al

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aeab77c29ec0a61ab35a8934eec41dd9
https://doi.org/10.1117/12.2314257

Femtosecond time-delay X-ray holography

Autor: Stefano Marchesini, M. Marvin Seibert, G. Huldt, Eberhard Spiller, Abraham Szöke, W. Henry Benner, Sébastien Boutet, Carl Caleman, Janos Hajdu, Christoph Bostedt, Stefan P. Hau-Riege, Marion Kuhlmann, David A. Shapiro, Saša Bajt, Urs Rohner, Rolf Treusch, M. Bergh, Richard A. London, Elke Plönjes, Bruce W. Woods, Thomas Möller, Michael J. Bogan, Henry N. Chapman, Anton Barty, F. Burmeister, Matthias Frank

Publikováno v: Nature 448, 676 (2007). doi:10.1038/nature06049

Extremely intense and ultrafast X-ray pulses from free-electron lasers offer unique opportunities to study fundamental aspects of complex transient phenomena in materials. Ultrafast time-resolved methods usually require highly synchronized pulses to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e144cbb5e13b402c7df8d9af51f7006
https://doi.org/10.1038/nature06049

Employing a detailed compositional analysis to develop a low defect Mo/Si deposition tool and process for EUVL mask blanks

Autor: Dave Krick, Eberhard Spiller, Patrick A. Kearney, Soon-Cheon Seo, Paul Mirkarimi, Rajul Randive, Andy Ma, San-In Han, Toshiyuki Uno

Publikováno v: Microelectronic Engineering. 83:695-698

Extreme ultraviolet lithography (EUVL) is the leading lithography technology to fabricate critical feature sizes of 32nm and smaller. For EUVL a Mo/Si multilayer-based reflective optical system is used and the development of suitable, defect-free mas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40947633a5ba498254bf4601f9807319
https://doi.org/10.1016/j.mee.2006.01.204

Advancing the ion beam thin film planarization process for the smoothing of substrate particles

Autor: Ted Liang, Paul B. Mirkarimi, D. G. Stearns, Farhad Salmassi, Eberhard Spiller, Jeff C. Robinson, Alan R. Stivers, James Alexander Liddle, Sherry L. Baker

Publikováno v: Mirkarimi, P.; Spiller, E.; Baker, S.; Robinson, J.; Stearns, D.; Liddle, J.A.; et al.(2004). Advancing the ion beam thin film planarization process for the smoothing of substrate particles. Microelectronic Engineering, 77(3/4/2008). Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/7sq7q296

For a number of technologies small substrate contaminants are undesirable, and for one technology in particular, extreme ultraviolet lithography (EUVL), they can be a very serious issue. We have demonstrated that the Ion Beam Thin Film Planarization

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db7fa7ef6372fecedda7d976eda4d188
https://doi.org/10.1016/j.mee.2004.12.098

Fabrication of high-efficiency multilayer-coated gratings for the EUV regime using e-beam patterned substrates

Autor: Eberhard Spiller, Farhad Salmassi, J. Alexander Liddle, Eric M. Gullikson, Erik H. Anderson, Paul B. Mirkarimi, Patrick P. Naulleau

Publikováno v: Optics Communications. 229:109-116

The use of multilayer reflection coatings has proven to be an effective means for improving the efficiency of soft X-ray and extreme ultraviolet gratings. These techniques have recently been extended to e-beam-patterned binary blazed substrates. Here

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::380dc32281c1f8ec3063bcd751048efa
https://doi.org/10.1016/j.optcom.2003.11.005