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Autor:
Earl Gow, Kangho Lee, Lim Wei Yi, Ta-Chien Cheng, Eva Wai Leong Ching, Lim Teck Guan, Jason Janesky
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
A magnetic shield was developed for the standard BGA MRAM DDRS chip to increase the magnetic interference tolerance from 100}}oe to more than 500 oetextbf{{. This enabled the low power and fast speed MRAM devices to operate in more rugged conditions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c803d7167f2c043d2880f8d550eadc6a
https://doi.org/10.1109/eptc.2018.8654329
https://doi.org/10.1109/eptc.2018.8654329
