Zobrazeno 1 - 10 of 25 pro vyhledávání: '"Eamonn T. Hughes"'
1
Akademický článek
Impact of Pocket Geometry on Quantum Dot Lasers Grown on Silicon Wafers
Autor: Rosalyn Koscica, Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Christy Li, Alec Skipper, John E. Bowers
Publikováno v: Advanced Photonics Research, Vol 5, Iss 3, Pp n/a-n/a (2024)
Epitaxially grown quantum dot (QD) lasers in narrow pockets on patterned silicon photonics wafers present a key step toward full monolithic integration of on‐chip light sources. However, InAs QD lasers grown in deep and narrow pockets demonstrate l
Externí odkaz: https://doaj.org/article/074249ae6db54030b766bf3a248c1fb0
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2
Akademický článek
Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
Autor: Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Andrew Clark, Mukul Debnath, Rosalyn Koscica, Gerald Leake, Joshua Herman, David Harame, Peter Ludewig, Yating Wan, John E. Bowers
Publikováno v: Light: Science & Applications, Vol 11, Iss 1, Pp 1-8 (2022)
Abstract Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket
Externí odkaz: https://doaj.org/article/2a3b78a8d44a404f99f112ff8e6633d3
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3
Akademický článek
Data on the densification during sintering of binder jet printed samples made from water- and gas-atomized alloy 625 powders
Autor: Amir Mostafaei, Eamonn T. Hughes, Colleen Hilla, Erica L. Stevens, Markus Chmielus
Publikováno v: Data in Brief, Vol 10, Iss C, Pp 116-121 (2017)
Binder jet printing (BJP) is a metal additive manufacturing method that manufactures parts with complex geometry by depositing powder layer-by-layer, selectively joining particles in each layer with a polymeric binder and finally curing the binder. A
Externí odkaz: https://doaj.org/article/26655bce1ce54ffd9dc03d3b060f9934
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8
Degradation Behaviors in InAs Quantum Dot Lasers on Silicon using Misfit Dislocation Trapping Layers
Autor: Robert W. Herrick, Kunal Mukherjee, Jennifer Selvidge, John E. Bowers, Chen Shang, Eamonn T. Hughes
Publikováno v: 2021 IEEE Photonics Conference (IPC).
InAs quantum dot lasers on silicon using misfit dislocation trapping layers show 400-fold improvement in lifetime at 80°C (failure criterion: 50% initial peak power). Trapped misfit segments show no evidence of recombination enhanced dislocation cli
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f88101ea1e03032715458020c8d25914
https://doi.org/10.1109/ipc48725.2021.9593088
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10
Pipe-diffusion-enriched dislocations and interfaces in SnSe/PbSe heterostructures
Autor: Eamonn T. Hughes, Bastien Bonef, Wei Cai, Kunal Mukherjee, Brian B. Haidet
Publikováno v: Physical Review Materials. 5
Dislocations provide fast diffusion pathways for atoms in semiconductors which can alter compositional profiles of finely tuned heterostructures. We show in model lattice-mismatched IV-VI semiconductor heterostructures of SnSe/PbSe on GaAs substrates
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::13449f983d60c994e85a175452b87389
https://doi.org/10.1103/physrevmaterials.5.073402
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