Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Eamon O'Connor"'
Autor:
Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Francesco Bellando, Igor Stolichnov, Adrian M. Ionescu
Publikováno v:
IEEE Transactions on Electron Devices. 69:2680-2685
Autor:
Philip Wallhead, Nadia Papadopoulou, Wenting Chen, Rolf A. Groeneveld, Roberto Danovaro, Rob Tinch, Caleb Smith, Cristina Gambi, Eamon O'Connor, Stephen Hynes
Publikováno v:
Journal of Environmental Management, 303
Journal of Environmental Management
Journal of Environmental Management 303 (2022)
Journal of Environmental Management
Journal of Environmental Management 303 (2022)
Deep-sea ecosystems are facing degradation which could have severe consequences for biodiversity and the livelihoods of coastal populations. Ecosystem restoration as a natural based solution has been regarded as a useful means to recover ecosystems.
Publikováno v:
Journal of Environmental Management
Embargo until 21.08.2022. It is increasingly recognized that restoration actions in marine environments are required in order to deal with continued habitat degradation and to support conservation strategies. Restoration success is judged on the ecol
Autor:
Marilyne Sousa, Eamon O'Connor, Mattia Halter, Jean Fompeyrine, Stefan Abel, Felix Eltes, Andrew J. Kellock
Publikováno v:
APL Materials, 6 (12)
APL Materials, Vol 6, Iss 12, Pp 121103-121103-7 (2018)
APL Materials
APL Materials, Vol 6, Iss 12, Pp 121103-121103-7 (2018)
APL Materials
We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b075cc0a26a1afd2da3bbd9df0057d4
https://hdl.handle.net/20.500.11850/315266
https://hdl.handle.net/20.500.11850/315266
Autor:
Eamon O'Connor, Bert Jan Offrein, Felix Eltes, Jean Fompeyrine, Daniele Caimi, Stefan Abel, Florian Fallegger, Marilyne Sousa, Marta D. Rossell
Publikováno v:
ACS Photonics. 3:1698-1703
Barium titanate (BaTiO3) has become an attractive material to extend the functionalities of the silicon photonics platform because of its large Pockels coefficient of more than 1000 pm/V. BaTiO3 integrated epitaxially on silicon-on-insulator substrat
Autor:
Eamon O'Connor, Paul K. Hurley, Brendan Sheehan, Ian M. Povey, Karim Cherkaoui, Scott Monaghan
Publikováno v:
Microelectronic Engineering. 147:325-329
Display Omitted Inversion response observed for n-type &p-type Au/Ni/Al2O3/In0.53Ga0.47As MOS devices.Cox extraction method from relationship between inversion capacitance and conductance.In0.53Ga0.47As minority carrier generation lifetime modified b
Publikováno v:
Physiological Reports
Obesity has been associated with a slowing of V˙O2 dynamics in children and adolescents, but this problem has not been studied in adults. Cardiovascular mechanisms underlying this effect are not clear. In this study, 48 adults (18 males, 30 females)
Autor:
Marilyne Sousa, Eamon O'Connor, Vladimir Djara, Daniele Caimi, Lukas Czornomaz, Jean Fompeyrine, Veeresh Deshpande
Publikováno v:
ECS Transactions. 69:131-142
Continuous scaling of CMOS technology has revolutionized our society. Although the microelectronic industry has benefited economically from the constant scaling of MOSFET dimensions, serious technical challenges have now emerged that could become sho
Autor:
Herwig Hahn, Jean Fompeyrine, Lukas Czornomaz, M. Sousa, Daniele Caimi, Eamon O'Connor, Vladimir Djara, Veeresh Deshpande
Publikováno v:
ESSDERC
2017 47th European Solid-State Device Research Conference (ESSDERC)
2017 47th European Solid-State Device Research Conference (ESSDERC)
Advanced CMOS nodes target high-performance at lower supply voltage. High-mobility III-V channel materials have the potential to meet this target. Although III-V materials such as InGaAs are beneficial for nFET channels, SiGe (or Ge) provides better
Autor:
Yannick Baumgartner, Julie Widiez, Lukas Czornomaz, Veeresh Deshpande, Eamon O'Connor, Herwig Hahn, Daniele Caimi, L. Brevard, Jean Fompeyrine, Marilyne Sousa, Maud Vinet, H. Boutry, C. Le Royer
Publikováno v:
2017 Symposium on VLSI Technology
We demonstrate, for the first time, the 3D Monolithic (3DM) integration of In 0.53 GaAs nFETs on FDSOI Si CMOS featuring short-channel Replacement Metal Gate (RMG) InGaAs n-FinFETs on the top layer and Gate-First Si CMOS on the bottom layer with TiN/