Zobrazeno 1 - 2
of 2
pro vyhledávání: '"EWI-19752"'
In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dris___00893::7824d8d6eeaa085c8a6009125c37ff74
http://eprints.eemcs.utwente.nl/secure2/19752/01/groenland.pdf
http://eprints.eemcs.utwente.nl/secure2/19752/01/groenland.pdf
Publikováno v:
Proceedings of STW.ICT Conference 2010, 89-92
STARTPAGE=89;ENDPAGE=92;TITLE=Proceedings of STW.ICT Conference 2010
STARTPAGE=89;ENDPAGE=92;TITLE=Proceedings of STW.ICT Conference 2010
In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::2608e57cd77440c2b6002c1e8bbd6ccb
https://research.utwente.nl/en/publications/on-the-leakage-problem-of-mim-capacitors-due-to-improper-etching-of-titanium-nitride(584eb30a-5879-493a-a29a-6f1150b3729a).html
https://research.utwente.nl/en/publications/on-the-leakage-problem-of-mim-capacitors-due-to-improper-etching-of-titanium-nitride(584eb30a-5879-493a-a29a-6f1150b3729a).html