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Autor:
Angel Rodríguez, T. Nesheiwat, N. Zhang, F. Neuilly, Francis Zaato, E. Hijzen, J. Melai, HongJiang Sun, W.D. van Noort
Publikováno v:
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008)., 93-96
STARTPAGE=93;ENDPAGE=96;TITLE=Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008).
STARTPAGE=93;ENDPAGE=96;TITLE=Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008).
The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86430482946b9573c17526c7f37ea762
https://doi.org/10.1109/bipol.2008.4662720
https://doi.org/10.1109/bipol.2008.4662720
