Zobrazeno 1 - 10
of 215
pro vyhledávání: '"ERCAN, H"'
Autor:
Cakar, Efe, Ercan, H. Ekmel, Fuchs, Gordian, Denisov, Artem O., Anderson, Christopher R., Gyure, Mark F., Petta, Jason R.
Publikováno v:
Appl. Phys. Lett. 125, 143504 (2024)
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has b
Externí odkaz:
http://arxiv.org/abs/2405.03596
We theoretically propose a method to perform in situ measurements of charge noise during logical operations in silicon quantum dot spin qubits. Our method does not require ancillary spectator qubits but makes use of the valley degree of freedom in si
Externí odkaz:
http://arxiv.org/abs/2402.14765
Autor:
Cifuentes, Jesús D., Mai, Philip Y., Schlattner, Frédéric, Ercan, H. Ekmel, Feng, MengKe, Escott, Christopher C., Dzurak, Andrew S., Saraiva, Andre
The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong
Externí odkaz:
http://arxiv.org/abs/2307.03455
Increasing the number of electrons in electrostatically confined quantum dots can enable faster qubit gates. Although this has been experimentally demonstrated, a detailed quantitative understanding has been missing. Here we study one- and three-elec
Externí odkaz:
http://arxiv.org/abs/2303.02958
Publikováno v:
Phys. Rev. B 104, 235302 (2021)
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy spectrum and tunn
Externí odkaz:
http://arxiv.org/abs/2105.10645
Publikováno v:
Phys. Rev. Lett. 128, 247701 (2022)
The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that
Externí odkaz:
http://arxiv.org/abs/2105.10643
Autor:
McJunkin, Thomas, MacQuarrie, E. R., Tom, Leah, Neyens, S. F., Dodson, J. P., Thorgrimsson, Brandur, Corrigan, J., Ercan, H. Ekmel, Savage, D. E., Lagally, M. G., Joynt, Robert, Coppersmith, S. N., Friesen, Mark, Eriksson, M. A.
Publikováno v:
Phys. Rev. B 104, 085406 (2021)
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostr
Externí odkaz:
http://arxiv.org/abs/2104.08232
Autor:
Dodson, J. P., Ercan, H. Ekmel, Corrigan, J., Losert, Merritt, Holman, Nathan, McJunkin, Thomas, Edge, L. F., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Physical Review Letters (Vol. 128, Issue 14), (2022)
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron val
Externí odkaz:
http://arxiv.org/abs/2103.14702
Autor:
Corrigan, J., Dodson, J. P., Ercan, H. Ekmel, Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Knapp, T. J., Holman, Nathan, McJunkin, Thomas, Neyens, Samuel F., MacQuarrie, E. R., Foote, Ryan H., Edge, L. F., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Phys. Rev. Lett. 127, 127701 (2021)
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such contro
Externí odkaz:
http://arxiv.org/abs/2009.13572
Autor:
Ercan, H. Ekmel, Ghosh, Joydip, Crow, Daniel, Premakumar, Vickram N., Joynt, Robert, Friesen, Mark, Coppersmith, S. N.
Publikováno v:
Phys. Rev. A 97, 012318 (2018)
The performance of quantum error correction schemes depends sensitively on the physical realizations of the qubits and the implementations of various operations. For example, in quantum dot spin qubits, readout is typically much slower than gate oper
Externí odkaz:
http://arxiv.org/abs/1708.08683