Zobrazeno 1 - 10
of 170
pro vyhledávání: '"EFFECT of radiation on transistors"'
Autor:
Dorozhkin, S. I.1 dorozh@issp.ac.ru, Kapustin, A. A.1, Umansky, V.2, von Klitzing, K.3, Smet, J. H.3
Publikováno v:
JETP Letters. Oct2018, Vol. 108 Issue 7, p465-470. 6p.
Publikováno v:
International Journal of Numerical Modelling. May/Jun2016, Vol. 29 Issue 3, p458-464. 7p.
Autor:
Kow-Ming Chang1 kmchang@cc.nctu.edu.tw, Chih-Tien Chang1 daily.deli@msa.hinet.net, Kuo-Yi Chao1, Chia-Hung Lin1 ohahaha20@hotmail.com
Publikováno v:
Sensors (14248220). 2010, Vol. 10 Issue 5, p4643-4654. 12p. 3 Diagrams, 6 Graphs.
Autor:
Orlov, M. L.1
Publikováno v:
Semiconductors. Mar2008, Vol. 42 Issue 3, p339-345. 7p. 3 Graphs.
Autor:
Shriki, A., Winter, R., Calahorra, Y., Kauffmann, Y., Ankonina, G., Eizenberg, M., Ritter, D.
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 6, p1-5, 5p, 5 Diagrams, 2 Graphs
Autor:
Hu, Zhiyuan1, Liu, Zhangli1, Shao, Hua1, Zhang, Zhengxuan1, Ning, Bingxu1, Chen, Ming1, Bi, Dawei1, Zou, Shichang1
Publikováno v:
IEEE Transactions on Nuclear Science. Jun2011 Part 3, Vol. 58 Issue 3, p1355-1360. 6p.
Autor:
Nowlin, R. N.1 nathan.nowlin@atk.com, Pease, R. L.2 rpease@rlpresearch.com, Platteter, D. G.3, Dunham, G. W.3, Seiler, J. E.3
Publikováno v:
IEEE Transactions on Nuclear Science. Dec2005 Part 1, Vol. 52 Issue 6, p2609-2615. 7p.
Autor:
Olson, Brian D.1 b.olson@vandcrbilt.edu, Ball, Dennis R.2, Warren, Kevin M.2, Massengill, Lloyd W.1, Haddad, Nadim F.3, Doyle, Scott E.3, McMorrow, Dale4
Publikováno v:
IEEE Transactions on Nuclear Science. Dec2005 Part 1, Vol. 52 Issue 6, p2132-2136. 5p.
Autor:
Djezzar, B., Smatti, A.
Publikováno v:
IEEE Transactions on Nuclear Science. Dec2000 Part 1 of 4, Vol. 47 Issue 6, p1872. 7p. 9 Graphs.
Autor:
Xapsos, M.A., Summers, G.P.
Publikováno v:
IEEE Transactions on Nuclear Science. Dec99 Part 1 of 4, Vol. 46 Issue 6, p1697. 5p. 5 Graphs.