Zobrazeno 1 - 10
of 118
pro vyhledávání: '"E.V. Emelianova"'
Autor:
K.B. Bulatov, E.V. Emelianova, D.V. Tropin, N.S. Skoryukina, Y.S. Chernyshova, A.V. Sheshkus, S.A. Usilin, Z. Ming, J.-C. Burie, M.M. Luqman, V.V. Arlazarov
Publikováno v:
Компьютерная оптика, Vol 46, Iss 2, Pp 252-270 (2022)
Identity documents recognition is an important sub-field of document analysis, which deals with tasks of robust document detection, type identification, text fields recognition, as well as identity fraud prevention and document authenticity validatio
Externí odkaz:
https://doaj.org/article/3d6b32fd71014f62a55306ba6bfabf14
Publikováno v:
Organic Electronics. 9:129-135
A model of the equilibrium 2D hopping mobility in a disordered organic semiconductor is formulated for arbitrary charge carrier densities and arbitrary temperatures. The calculated dependence of the 2D mobility upon inverse temperature is compared wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03829a058f771b1d8405f84775cd0142
https://doi.org/10.1016/j.orgel.2007.09.004
https://doi.org/10.1016/j.orgel.2007.09.004
Publikováno v:
Thin Solid Films. :593-597
High carrier mobilities have been reported in a-Si:H samples prepared at high deposition rate and high substrate temperature in an expanding thermal plasma (ETP). Those mobilities were found to be field independent, and subsequent analysis showed tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c9ca752588ed3fdde3dc4330d67c47e
https://doi.org/10.1016/j.tsf.2005.12.118
https://doi.org/10.1016/j.tsf.2005.12.118
Publikováno v:
Journal of Non-Crystalline Solids. 352:1122-1125
Time-of-flight (TOF) measurements are commonly accepted as one of the most reliable experimental technique to determine the mobility and density-of-states (DOS) distribution in disordered organic and inorganic materials. However, interpretation of TO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::238cb429f40019ad98504e768ecb9cc7
https://doi.org/10.1016/j.jnoncrysol.2005.12.045
https://doi.org/10.1016/j.jnoncrysol.2005.12.045
Publikováno v:
Journal of Materials Science: Materials in Electronics. 16:703-713
Photoconductivity refers to the incremental change upon illumination of the electrical conductivity of a substance. For semiconductors and insulators, where the conductivity in the dark is low, significant changes can be measured. From the dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::782029b178c2e773013933289858dd13
https://doi.org/10.1007/s10854-005-4972-7
https://doi.org/10.1007/s10854-005-4972-7
Publikováno v:
Journal of Non-Crystalline Solids. :603-606
A model of hopping charge carrier transport in a doped disordered organic semiconductor is suggested. It is shown that the doping efficiency can be high in such materials even if the activation energy for dopant formation is comparatively large. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e61a210d33aebb509b347f8059d2b0f3
https://doi.org/10.1016/j.jnoncrysol.2004.03.051
https://doi.org/10.1016/j.jnoncrysol.2004.03.051
Publikováno v:
Journal of Non-Crystalline Solids. :626-629
A unified model of hopping thermally stimulated luminescence (TSL) and thermally stimulated current (TSC) in disordered organic semiconductors and polymers is suggested. The differences between photoinduced TSL and TSC, measured on the same sample, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a688aa5c41cd60d8c8c861b9ab99470
https://doi.org/10.1016/j.jnoncrysol.2004.03.056
https://doi.org/10.1016/j.jnoncrysol.2004.03.056
Autor:
Vladimir Arkhipov, Guy Adriaenssens, Mihai S. Iovu, E.P. Colomeico, I. A. Vasiliev, E.V Emelianova
Publikováno v:
Journal of Physics: Condensed Matter. 16:2949-2958
Photocurrent relaxation was investigated in pure and Pr-doped amorphous As2S3 films after constant illumination had been switched off. It is shown that, in the temperature range from 290 to 370 K and for the time interval 0.5–150 s, the photocurren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d691978da44a21fee8749856bb8c66
https://doi.org/10.1088/0953-8984/16/17/021
https://doi.org/10.1088/0953-8984/16/17/021
Publikováno v:
Philosophical Magazine Letters. 84:47-51
A recently formulated electrical model of photoinduced volume expansion caused by the Coulomb interaction between photogenerated carriers in chalcogenide glasses is examined quantitatively. It is shown that, depending upon photoexcitation conditions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bbabfee8a840cdf11d086df7d2f2044
https://doi.org/10.1080/09500830310001628202
https://doi.org/10.1080/09500830310001628202
Autor:
M. Brinza, Naser Qamhieh, Guy Adriaenssens, E.V Emelianova, Robert E. Johanson, Safa Kasap, Vladimir Arkhipov
Publikováno v:
Journal of Non-Crystalline Solids. :215-219
Time-of-flight post-transit data that suggested positions in the band gap atEv þ 0:4 eV andEc � 0:55 eV for the thermally accessible levels of the intrinsic negative-U centers of a-Se have been re-examined. The introduction into the Onsager formal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2526da528b3361a8960fbea6ce457d6c
https://doi.org/10.1016/s0022-3093(03)00426-5
https://doi.org/10.1016/s0022-3093(03)00426-5