Zobrazeno 1 - 10
of 52
pro vyhledávání: '"E.T. Ogawa"'
Autor:
Behzad Bavarian, R. Leon, J.A. Colon, K.C. Evans, E.T. Ogawa, V. Blaschke, D.T. Vu, Paul S. Ho
Publikováno v:
Journal of Materials Research. 19:3135-3138
Void evolution during electromigration was studied by recording void nucleation, growth, and displacements at various intervals during thermal (240 °C) and electrical stress tests (2 × 106 amps/cm2) of Cu interconnects. Structural data was collecte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10794fc831d477b05b389a13c0a66a9f
https://doi.org/10.1557/jmr.2004.0408
https://doi.org/10.1557/jmr.2004.0408
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:129-141
Multiple new materials are being adopted by the semiconductor industry at a rapid rate for both semiconductor devices and packages. These advances are driving significant investigation into the impact of these materials on device and package reliabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e444430950760350b0aaf414d4e7f7
https://doi.org/10.1109/tdmr.2004.831990
https://doi.org/10.1109/tdmr.2004.831990
Publikováno v:
Materials Science in Semiconductor Processing. 7:157-163
Multi-link statistical test structures were used to study the effect of low k dielectrics on EM reliability of Cu interconnects. Experiments were performed on dual-damascene Cu interconnects integrated with oxide, CVD low k, porous MSQ, and organic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50760bb04b89c258cc82489e295722d9
https://doi.org/10.1016/j.mssp.2004.06.005
https://doi.org/10.1016/j.mssp.2004.06.005
Publikováno v:
IEEE Transactions on Reliability. 51:403-419
Electromigration studies on Cu interconnects are reviewed. Some history and more recent results are discussed along with a description of the present interpretations of the active mass transport mechanisms involved in Cu electromigration. The issue o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b291f6402e8c0f90ac0bd48d408e96
https://doi.org/10.1109/tr.2002.804737
https://doi.org/10.1109/tr.2002.804737
Autor:
Hideki Matsuhashi, Volker A. Blaschke, Ki-Don Lee, Robert H. Havemann, Paul S. Ho, E.T. Ogawa
Publikováno v:
Journal of Electronic Materials. 31:1052-1058
Recent results on up-direction electromigration (EM) studies on Cu dual-damascene (DD) interconnects are presented. The issue of the DD process and its potential effect on EM reliability is described with special focus on the peculiarities of the DD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::134b3878ecb6c5db95ec00a3d221b3eb
https://doi.org/10.1007/s11664-002-0042-6
https://doi.org/10.1007/s11664-002-0042-6
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Time-dependent dielectric breakdown (TDDB) of low-k dielectrics is reported for fully integrated carbon-doped silica dielectric (SiOC, keff=2.9) at wafer level over a wide range of area and electric-field test conditions at 105degC. In addition, long
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab46de7481f92c4242cfe3426711a743
https://doi.org/10.1109/relphy.2007.369922
https://doi.org/10.1109/relphy.2007.369922
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
Extensive time-dependent dielectric breakdown (TDDB) data were taken for several silica-based low-k interconnect dielectrics so that the full statistical-distribution for the field acceleration parameter (gamma) could be determined. The low-k materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2eeda28cc1effcce7ebdd3088ea1dc4
https://doi.org/10.1109/relphy.2006.251265
https://doi.org/10.1109/relphy.2006.251265
Autor:
M. Kerber, W. Xiong, Joe W. McPherson, G.S. Haase, E.T. Ogawa, T. Pompl, K. Schrufer, T. Schulz, Homi C. Mogul, R. Cleavelin
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
Future CMOS technology generations may implement multi-gate architectures according to S. M. Kim et al. (2004), D Ha et al. (2004), S.-Y. Kim et al. (2005), W.-S. Liao et al. (2005), S. Maeda et al. (2004), N. Collaert et al. (2005),and C. Jahan et a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545d69f471cce9d27fe664de8a80214a
https://doi.org/10.1109/relphy.2006.251309
https://doi.org/10.1109/relphy.2006.251309
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
The shrinking of line-to-line spacing in interconnect systems for advanced IC technology and the use of new lower dielectric constant materials create the need for tools to evaluate the interconnect dielectric reliability. A multi-temperature, dual r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f33ee044666c3e5538af8e1f6f307ae1
https://doi.org/10.1109/relphy.2005.1493130
https://doi.org/10.1109/relphy.2005.1493130
Publikováno v:
Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003.
Electromigration (EM) reliability in Cu dual-damascene structures integrated with oxide and low-k ILD was investigated using a statistical approach. This approach is efficient in addressing early failures using multi-link structures to sample very la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388857f8f089a59863c5a3fc4ee5b584
https://doi.org/10.1109/ipfa.2003.1222739
https://doi.org/10.1109/ipfa.2003.1222739