Line width dependent mobility in high-k a comparative performance study between FUSI and TiN

Autor: L. Pantisano, L. Trojman, S. Severi, E.San Andres, C. Kerner, A. Veloso, I. Ferain, T. Hoffman, G. Groeseneken, S. de Gendt

Publikováno v: 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Apr 2007, Hsinchu, Japan. pp.1-2, ⟨10.1109/VTSA.2007.378909⟩

An original detailed methodology has been demonstrated for comparing short channel device performances in HfSiON and two different MG integration schemes. In HfSiON there is substantial room for improvement towards shorter metallurgical gate length a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da75c9db7f3fdce999bf295b6431a47a
https://hal.archives-ouvertes.fr/hal-02952258