Zobrazeno 1 - 10
of 151
pro vyhledávání: '"E.S. Koteles"'
Publikováno v:
Journal of Physics and Chemistry of Solids. 56:375-379
We have observed extremely sharp (Δ ~ 0.01 meV) discontinuities in the photoluminescence excitation (PLE) spectra of GaAs Al x Ga 1 − x As single quantum wells under hydrostatic pressure at low temperatures. These discontinuities are found to orig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::116620659ca8d760fc58eaf991439815
https://doi.org/10.1016/0022-3697(94)00213-4
https://doi.org/10.1016/0022-3697(94)00213-4
Publikováno v:
IEEE Journal of Quantum Electronics. 30:459-465
An investigation of GaAs QW's with tensile-strained GaAsP barriers grown on GaAs substrates by organometallic vapor phase epitaxy is reported. We demonstrate that this system permits light- and heavy-hole valence bands to be approximately merged with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58acbc61ed23780480e6f543b82f9990
https://doi.org/10.1109/3.283794
https://doi.org/10.1109/3.283794
Publikováno v:
IEEE Journal of Quantum Electronics. 30:1709-1712
The beat spectra between the adjacent modes of a semiconductor laser having no external cavity are reported. Passive beat-frequency locking is observed at high power without a saturable absorber. This self-induced locking is manifested by the dramati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c352aaf0232f0d7c3be753f831ca2b0
https://doi.org/10.1109/3.301633
https://doi.org/10.1109/3.301633
Publikováno v:
Physical Review B. 47:1991-1997
We have investigated the energies of the electronic states of GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As strongly coupled double quantum wells and uncoupled multiple quantum wells as functions of hydrostat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcdcb61144078b5d79cc768e326adbfc
https://doi.org/10.1103/physrevb.47.1991
https://doi.org/10.1103/physrevb.47.1991
Autor:
E.S. Koteles, Jian-Jun He
Publikováno v:
CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671).
We review recent advances in InP-based photonic integrated circuits (PICs) for optical communications. The latest results on an optical channel monitor monolithically integrating an echelle grating and a photodetector array are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6e7cd12719a4af9bcd46382965771f8
https://doi.org/10.1109/cleopr.2003.1277167
https://doi.org/10.1109/cleopr.2003.1277167
Publikováno v:
Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464).
Addresses some key issues in integrated waveguide demultiplexer technology including insertion loss, inter-channel crosstalk, and polarization sensitivity and compares and contrasts the two different contenders, etched diffraction grating and arrayed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::621722eeaf9cd1058891995612bbe96c
https://doi.org/10.1109/cleopr.1999.814734
https://doi.org/10.1109/cleopr.1999.814734
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
The authors report on the effects of the duration of growth interruptions (during which group V gases are switched) on the geometrical shapes of strained and lattice matched InGaAs/InP single quantum wells (QWs) grown by gas source molecular beam epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1ba2bcaeba8641e218c671791358bcf
https://doi.org/10.1109/iciprm.1992.235648
https://doi.org/10.1109/iciprm.1992.235648
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
A technique using photoluminescence spectroscopy (PL) to optically characterize the strain present in a lattice mismatched III-V compound semiconductor bulk epilayer is described. The 15-K PL spectra of a series of In/sub x/Ga/sub 1-x/As epilayers wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c250d905e20abc8e21115c65a7916663
https://doi.org/10.1109/iciprm.1991.147397
https://doi.org/10.1109/iciprm.1991.147397
Publikováno v:
IEEE Photonics Technology Letters. 3:784-786
The reported wide variations in the damping behavior of quantum well lasers are explained by a novel theory of nonlinear gain, well-barrier hole burning. In the model a spatial hole develops perpendicular to the active region involving carriers movin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddaf1982d145f62890024616f100fb63
https://doi.org/10.1109/68.84492
https://doi.org/10.1109/68.84492
Publikováno v:
Solid State Communications. 58:97-100
Using resonant Raman scattering and surface enhanced Raman scattering techniques, changes in the structural and electronic properties of Langmuir-Blodgett (L-B) polydiacetylene films were observed as film thicknesses were increased from one monolayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af9ece89a2874d26c0a61b2c181b7c2a
https://doi.org/10.1016/0038-1098(86)90862-8
https://doi.org/10.1016/0038-1098(86)90862-8