Zobrazeno 1 - 10
of 193
pro vyhledávání: '"E.S. Daniel"'
Autor:
M.S. De Martin, A.F. Brighenti, A.R. Luz, E.S. Daniel, G.F. Sander, I. Malohlava, F.R. de Freitas, M. Denchinsky
Publikováno v:
Acta Horticulturae. :505-510
Akademický článek
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Publikováno v:
IEEE Circuits and Systems Magazine. 13:10-20
The growth in network data-rates is outpacing several constituent technologies, which is creating new challenges that cannot be readily overcome through simple extensions of previous approaches. This paper contributes by identifying new challenges fa
Autor:
E.S. Daniel, Clifton R. Haider, John Jameson, Benjamin Buhrow, David R. Holmes, Barry K. Gilbert
Publikováno v:
EMBC
Cardiovascular diseases are the main cause of death worldwide. Atherosclerosis and atrial fibrillation are structural and electrical pathophysiology, respectively, that can lead to acute events such as stroke or myocardial infarction. We used particl
Publikováno v:
ReConFig
The Advanced Encryption Standard (AES) together with the Galois Counter Mode (GCM) of operation has been approved for use in several high throughput network protocols to provide authenticated encryption. However, the demand for continued increase in
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 59:1775-1782
Differential input-ouput buffers are frequently utilized in high-speed communication systems. Often, a transmit buffer is connected to a 100-Ω differential receive buffer through a passive interconnect link with no means of verifying the true differ
Autor:
K. Fritz, M.A. Daun-Lindberg, J.F. Prairie, J.S. Humble, E.S. Daniel, D.J. Schwab, R.A. Kertis, Barry K. Gilbert, R.A. Philpott
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2295-2311
The design and wafer probe test results of a 5-bit SiGe flash ADC are presented. The integrated circuit, fabricated in a 200/250 GHz fT/Fmax, SiGe BiCMOS technology, provides a 5-bit analog to digital conversion with dual Nyquist operation at sample
Autor:
Lanza, Giuseppe1,2 (AUTHOR) glanza@oasi.en.it, Mogavero, Maria P.3,4 (AUTHOR) paola_mogavero@libero.it, Salemi, Michele1 (AUTHOR) msalemi@oasi.en.it, Ferri, Raffaele1 (AUTHOR) rferri@oasi.en.it
Publikováno v:
Cells (2073-4409). Aug2024, Vol. 13 Issue 15, p1246. 15p.
Publikováno v:
IEEE Transactions on Magnetics. 43:1934-1940
We have found that the frequencies of continuous-wave (CW) microwave oscillations in nanocontact spin-transfer (ST) devices occur in well-defined planes of frequencies, as a function of the dc current bias, the direction of the magnetic field, and th
Publikováno v:
IEEE Transactions on Electron Devices. 50:2434-2444
We present a method for simulating static domain formation in distributed negative differential resistance devices using a distributed circuit array model coupled with quantum transport simulations. This simulation method is applied to the case of a