Zobrazeno 1 - 10
of 64
pro vyhledávání: '"E.P. Ramsay"'
Autor:
Philip Gunkel, E.P. Ramsay, Christoph Engel, Edward P. Morris, Michael Pilsl, Jerome Gouge, Alessandro Vannini, Julia L. Daiß, Fabienne Beuron, Helen King, G. Abascal-Palacios
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-12 (2020)
Nature Communications
Nature Communications
In eukaryotes, RNA Polymerase (Pol) III is specialized for the transcription of tRNAs and other short, untranslated RNAs. Pol III is a determinant of cellular growth and lifespan across eukaryotes. Upregulation of Pol III transcription is observed in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e121678a73f70f7a2c33ce8e0043ef90
https://eprints.bbk.ac.uk/id/eprint/42478/1/41467_2020_Article_20262.pdf
https://eprints.bbk.ac.uk/id/eprint/42478/1/41467_2020_Article_20262.pdf
Autor:
Stefan Weitzer, Katharina Heitmeier, Thomas Tuschl, Carla Schmidt, Samoil Sekulovski, Silvia Panizza, Pascal Devant, Frank Baas, Simon Trowitzsch, Marie Barth, Javier Martinez, Tasos Gogakos, Anda Pitiriciu, E.P. Ramsay
Introns of human transfer RNA precursors (pre-tRNAs) are excised by the tRNA splicing endonuclease TSEN in complex with the RNA kinase CLP1. Mutations in TSEN/CLP1 occur in patients with pontocerebellar hypoplasia (PCH), however, their role in the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae00805e04bdd8666fb8bbc2f817d445
https://doi.org/10.1101/2020.08.03.234229
https://doi.org/10.1101/2020.08.03.234229
Autor:
E.P. Ramsay, A. B. Horsfall, D. T. Clark, R.A.R. Young, Nicholas G. Wright, Dave A. Smith, Ming Hung Weng, Muhammad Idris, A.E. Murphy, H.K. Chan
Publikováno v:
Materials Science Forum. 897:513-516
Operation of SiC MOSFETs beyond 300°C opens up opportunities for a wide range of CMOS based digital and analogue applications. However the majority of the literature focuses only on the optimization of a single type of MOS device (either PMOS or mor
Autor:
D. T. Clark, A.E. Murphy, H.K. Chan, D. A. Smith, Ming Hung Weng, Alton B. Horsfall, R.A.R. Young, Muhammad Idris, E.P. Ramsay
Publikováno v:
Materials Science Forum. 858:631-634
We demonstrate the influence of enhancing the dielectric film used to form the gate in complimentary MOS circuits, designed for high temperature operation. The data show that the characteristics of both n-MOS and p-MOS capacitors and transistors have
Publikováno v:
The EMBO Journal. 36:2664-2666
Transcription initiation at the ribosomal RNA promoter requires RNA polymerase (Pol) I and the initiation factors Rrn3 and core factor (CF). Here, we combine X-ray crystallography and cryo-electron microscopy (cryo-EM) to obtain a molecular model for
Autor:
Alton B. Horsfall, Robin. F. Thompson, R.A.R. Young, B.J.D. Furnival, Craig T. Ryan, D. T. Clark, E.P. Ramsay, A.E. Murphy, Ming Hung Weng, Dave A. Smith
Publikováno v:
Materials Science Forum. :492-495
We present the influence of phosphorous auto-doping on the characteristics of the oxide interface in 4H-SiC following high temperature gate oxide annealing. IV characteristics show no evidence of direct tunnelling breakdown; however Fowler Nordheim (
Autor:
Ming Hung Weng, Robin. F. Thompson, E.P. Ramsay, Dave A. Smith, H.K. Chan, R.A.R. Young, A.D. Murphy, D. T. Clark, Alton B. Horsfall
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2015:000033-000036
The potential to thermally grow SiO2 on silicon carbide has resulted in it becoming the technology of choice to realise high temperature CMOS circuits. The challenge to achieve a high quality gate stack relies on engineering the metal-insulator-semic
Autor:
E.P. Ramsay, Alessandro Vannini
Publikováno v:
Biochimica et biophysica acta. Gene regulatory mechanisms. 1861(4)
RNA polymerase III catalyses the synthesis of tRNAs in eukaryotic organisms. Through combined biochemical and structural characterisation, multiple auxiliary factors have been identified alongside RNA Polymerase III as critical in both facilitating a
Autor:
Lucy Claire Martin, D. T. Clark, Alton B. Horsfall, R.A.R. Young, Nicholas G. Wright, A.E. Murphy, H.K. Chan, Jonathan P. Goss, Dave A. Smith, E.P. Ramsay, Robin. F. Thompson
Publikováno v:
Materials Science Forum. :428-431
Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and
Autor:
A. B. Horsfall, Nicholas G. Wright, E.P. Ramsay, D. T. Clark, R.A.R. Young, Ming Hung Weng, Muhammad Idris, A.E. Murphy, H.K. Chan
Publikováno v:
Journal of applied physics, 2016, Vol.120(21), pp.214902 [Peer Reviewed Journal]
In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance–voltage measurements taken for a range of frequencies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5dc7b0808b7cbbd71ca2423e39077f23
http://dro.dur.ac.uk/26387/1/26387.pdf
http://dro.dur.ac.uk/26387/1/26387.pdf