Zobrazeno 1 - 10
of 91
pro vyhledávání: '"E.P. Donovan"'
Publikováno v:
Surface and Coatings Technology. :149-152
Thin films of ZrO 2 Al 2 O 3 have been produced by pulsed laser deposition from targets that were mixtures of ZrO 2 and Al 2 O 3 with a pre-selected composition. The chemical composition of the film was the same as that of the target as determined
Publikováno v:
Surface and Coatings Technology. 83:183-188
Polished substrates of 52100 steel were implanted with 150 keV Ta+ or Nb+ to a dose of 2 × 1017 ions cm−2 with the target chamber at best vacuum (approximately 5 × 10−7 Torr) or with the chamber backfilled with oxygen to pressures of 1, 5, or 1
Autor:
Randolph E. Treece, James S. Horwitz, E.P. Donovan, E. F. Skelton, Douglas B. Chrisey, Syed B. Qadri
Publikováno v:
Journal of Solid State Chemistry. 117:294-299
Pulsed laser deposition (PLD) has been used to grow a series of NbN x (0 ≤ x ≤ 1.2) thin-film materials, including a new superconducting phase. The structural and electrical properties of the NbN x films were characterized. Structural analysis of
Publikováno v:
Surface and Coatings Technology. 66:499-504
A series of molybdenum nitride films was synthesized by electron beam evaporative deposition of molybdenum, with simultaneous bombardment by nitrogen ions from a Kaufman ion source. The nitrogen ions were accelerated to 500 or 1000eV. The film compos
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 91:540-544
Hydrogenated silicon nitride films were produced near room temperature by electron beam evaporation of Si and simultaneous bombardment with a 500 eV ammonia ion beam from a Kaufman ion source and for a variety of ratios of incident charge to evaporan
Publikováno v:
ChemInform. 26
Publikováno v:
Surface and Coatings Technology. 51:30-34
The pitting potential of silicon nitride ion beam assisted deposited (IBAD) coatings on aluminum in deaerated 0.1 M NaCl solutions increased with coating thickness for coatings ranging from 0.01 to 2.0 μm. Rutherford backscattering spectroscopy and
Publikováno v:
Optical and Quantum Electronics. 23:S883-S893
Precision reflection measurements were performed on GaAs/AlAs superlattices of the same composition but different layer spacings. Nonlinear-least-squares fits to the data were performed to a single layer. Measurements were extracted for the superlatt
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:821-830
An ion‐beam‐assisted‐deposition (IBAD) system is under development to fabricate Si1−x Nx films for optical devices. Reproducible film composition requires characterization of the relationship between the incorporated nitrogen atom fraction x
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:831-839
A method is given to obtain an absolute calibration of the ion and evaporant fluxes in an ion‐beam‐assisted deposition system based upon a Kaufman ion source and an electron beam vapor source. The nitrogen‐ion silicon‐vapor material system is