Zobrazeno 1 - 10
of 83
pro vyhledávání: '"E.M. Trukhanov"'
Autor:
A.V. Kolesnikov, A.P. Vasilenko, E.M. Trukhanov, Z.T. Lei, C.Q. Zhu, C.H. Yang, G.A. Verozubova
Publikováno v:
Journal of Crystal Growth. 580:126479
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::781b9e0c7b8fa955d33c59de919a59f6
https://doi.org/10.1016/j.jcrysgro.2021.126479
https://doi.org/10.1016/j.jcrysgro.2021.126479
Autor:
P.V. Kasimkin, K.B. Fritzler, V.A. Moskovskih, A.P. Vasilenko, A.V. Kolesnikov, E.M. Trukhanov
Publikováno v:
Journal of Crystal Growth. 468:457-461
Dislocation structure of the Ge single crystals grown by Czochralski method with low thermal gradient has been studied. The selective etching technique and the X-Ray transmission and reflection topography were used. Clearly defined non-uniform disloc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59dac35053298e3b9f8407cc009e4108
https://doi.org/10.1016/j.jcrysgro.2016.11.051
https://doi.org/10.1016/j.jcrysgro.2016.11.051
Publikováno v:
Journal of Physics: Condensed Matter. 15:6801-6808
The real defect structure of LiB3O5 crystal grown by a top seeded solution growth method has been observed using x-ray projection and reflective topography. Space mapping of such defects as growth sector boundaries, striation and dislocations have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d67a69c532981478db8baf2265e401
https://doi.org/10.1088/0953-8984/15/40/016
https://doi.org/10.1088/0953-8984/15/40/016
Publikováno v:
Journal of Physics D: Applied Physics. 36:A44-A48
In x-ray topographs of Si/GexSi1−x/Si(001) heterosystems, the intensity variations, which are associated with inhomogeneous GeSi thickness, are observed. The layers of GeSi and Si were grown by molecular beam epitaxy. The growth conditions preservi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c248938673d3e82ab2b91d952c7ee1b
https://doi.org/10.1088/0022-3727/36/10a/309
https://doi.org/10.1088/0022-3727/36/10a/309
Autor:
A.V. Kolesnikov, E.M. Trukhanov
Publikováno v:
Applied Surface Science. :669-673
The influence of the interface orientation on the strain state and structure properties of epitaxial layers is theoretically investigated for semiconductor films grown on (001) misoriented substrates. The analysis shows that for two intersected MD ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::406d86230ecd547e4ba62e54040f1f0d
https://doi.org/10.1016/s0169-4332(97)00559-x
https://doi.org/10.1016/s0169-4332(97)00559-x
Autor:
A. A. Merkulov, V. I. Tjurikov, Victor V. Atuchin, Ludmila I. Isaenko, E.M. Trukhanov, L.V. Sokolov
Publikováno v:
Journal of Crystal Growth. 171:146-153
The peculiarities of KTiOAsO4 crystal growth from self-fluxes with a KAs ratio ranging from 1 to 2 were investigated. The arsenates crystallized in the ternary system KTiOAsO4KAsO3K4As2O7 in the temperature range 500–1000°C were identified.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0489febbc41b8f9be4760a4cf033a280
https://doi.org/10.1016/s0022-0248(96)00483-6
https://doi.org/10.1016/s0022-0248(96)00483-6
Publikováno v:
International Workshops and Tutorials on Electron Devices and Materials.
It has been theoretically predicted for the quasi-equilibrium conditions that at the first relaxation stage two dislocation arrays are formed in the vicinal (1 1 15) interface. The slip plane of these arrays is the same - (1 1 1) and Burgers vector d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab546ad4fc7867112b85adedbd25a6b
https://doi.org/10.1109/sibedm.2006.230309
https://doi.org/10.1109/sibedm.2006.230309
Akademický článek
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Autor:
E.M. Trukhanov, S. I. Romanov, M. A. Revenko, O. P. Pchelyakov, A. Gutakovskii, Alexey Fedorov, L.V. Sokolov, M. A. Lamin, V. V. Kirienko, A. A. Karanovich
Publikováno v:
Growth of Crystals ISBN: 9781461351214
The epitaxial system Si—porous Si—Si substrate possesses unusual properties for microelectronic structures and is promising for use in instruments, especially after converting the three-layer system into a Si-on-insulator structure via oxidation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3114d1e2be0108f4471c5462af89e603
https://doi.org/10.1007/978-1-4615-0537-2_4
https://doi.org/10.1007/978-1-4615-0537-2_4
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
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