Zobrazeno 1 - 10
of 61
pro vyhledávání: '"E.M. Griswold"'
Autor:
Cui, Dengshuai1 (AUTHOR) dengshuai_cui@163.com, Yu, Naibiao1 (AUTHOR), Xiong, Sanya1 (AUTHOR), He, Ruiqiu1 (AUTHOR), Xiao, Shijun1 (AUTHOR), Li, Longyun1 (AUTHOR), Guo, Yuanmei1 (AUTHOR) dengshuai_cui@163.com
Publikováno v:
Animals (2076-2615). Nov2024, Vol. 14 Issue 22, p3231. 13p.
Publikováno v:
Journal of Crystal Growth. 267:592-597
High-performance MOCVD-grown N-p-N InP/GaAsSb/InP DHBTs based on epitaxial layers deposited on 100 mm InP substrates are reported. The transistors feature the first nearly ideal emitter/base junction characteristics reported for material grown using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d2e167adfbc261f89e53a94b4e99a00
https://doi.org/10.1016/j.jcrysgro.2004.04.035
https://doi.org/10.1016/j.jcrysgro.2004.04.035
Autor:
Karin Hinzer, R. Williams, F. Robert, R.W. Glew, M. Extavour, J.K. White, D. Goodchild, G. Smith, E.M. Griswold, Anthony J. SpringThorpe
Publikováno v:
Journal of Crystal Growth. 251:760-765
Compressively strained MQW InAlGaAs laser structures have been grown on [1 0 0] sulfur-doped InP substrates using digital alloy molecular beam epitaxy at temperatures in the range 480–585°C. In the limited temperature interval ∼520–555°C quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80ef45de659dbb4a08905deefdc781a4
https://doi.org/10.1016/s0022-0248(02)02195-4
https://doi.org/10.1016/s0022-0248(02)02195-4
Publikováno v:
Applied Surface Science. 180:200-208
A study has been made of the effect of relatively high-energy particle (i.e. Ar+, Cu0, Ti0) treatment of the Cyclotene surface on the adhesion of deposited metals. XPS has revealed that all the particles damage the surface in the same manner, limitin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aabf20b227f698f71809a363a1f8ecc
https://doi.org/10.1016/s0169-4332(01)00339-7
https://doi.org/10.1016/s0169-4332(01)00339-7
Publikováno v:
International Conference on Molecular Bean Epitaxy.
As part of an investigation of the optimum growth conditions for the preparation of strained MQW InAlGaAs lasers for operation at 1.3 /spl mu/m, one to six quantum well structures, with up to 1.4% strain, have been grown at temperatures in the range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da09c791a2f7491a0718c19aa2243e8
https://doi.org/10.1109/mbe.2002.1037770
https://doi.org/10.1109/mbe.2002.1037770
Autor:
Götz, D.1,2 (AUTHOR) diego.gotz@cea.fr, Boutelier, M.3 (AUTHOR), Burwitz, V.4 (AUTHOR), Chipaux, R.1,2 (AUTHOR), Cordier, B.1,2 (AUTHOR), Feldman, C.5 (AUTHOR), Ferrando, P.1,2 (AUTHOR), Fort, A.3 (AUTHOR), Gonzalez, F.3 (AUTHOR), Gros, A.1,2 (AUTHOR), Hussein, S.6 (AUTHOR), Le Duigou, J.-M.3 (AUTHOR), Meidinger, N.4 (AUTHOR), Mercier, K.3 (AUTHOR), Meuris, A.1,2 (AUTHOR), Pearson, J.5 (AUTHOR), Renault-Tinacci, N.1,2 (AUTHOR), Robinet, F.6 (AUTHOR), Schneider, B.1,2 (AUTHOR), Willingale, R.5 (AUTHOR)
Publikováno v:
Experimental Astronomy. Apr2023, Vol. 55 Issue 2, p487-519. 33p.
Autor:
Li, Panping1,2 (AUTHOR), Yin, Qian-Qing1 (AUTHOR), Li, Zhengwei1 (AUTHOR), Tao, Lian1 (AUTHOR) taolian@ihep.ac.cn, Wen, Xiangyang1 (AUTHOR) wenxy@ihep.ac.cn, Zhang, Shuang-Nan1,2 (AUTHOR), Qi, Liqiang1 (AUTHOR), Zhang, Juan1 (AUTHOR), Zhao, Donghua3 (AUTHOR), Li, Dalin4 (AUTHOR), Yu, Xizheng4 (AUTHOR), Bu, Qingcui5 (AUTHOR), Chen, Wen6 (AUTHOR), Chen, Yupeng1 (AUTHOR), Huang, Yiming1,2 (AUTHOR), Huang, Yue1 (AUTHOR), Jin, Ge7 (AUTHOR), Li, Gang1 (AUTHOR), Liu, Hongbang8 (AUTHOR), Liu, Xiaojing1 (AUTHOR)
Publikováno v:
Experimental Astronomy. Apr2023, Vol. 55 Issue 2, p447-486. 40p.
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